A5G35H055NT4 Overview
The A5G35H055NT4 is a high-performance semiconductor device designed to deliver efficient power management in demanding industrial applications. Featuring advanced electrical characteristics and robust construction, this component ensures reliable operation under stringent conditions. Optimized for integration into power conversion and motor control systems, it offers excellent switching capabilities and thermal stability. Engineers and sourcing specialists benefit from its precise specifications and compliance with industry standards. For comprehensive technical details and support, visit الشركة المصنعة للدوائر المتكاملة.
A5G35H055NT4 Technical Specifications
| المعلمة | القيمة | الوحدة |
|---|---|---|
| جهد مصدر التصريف (Vدس) | 550 | V |
| تيار التصريف المستمر (ID) | 35 | A |
| جهد عتبة البوابة (Vخ ع (ر)) | 2.0 ?C 4.0 | V |
| إجمالي شحنة البوابة (Qg) | 45 | nC |
| Maximum Power Dissipation (PD) | 150 | W |
| RDS(على) (Max) | 0.055 | ?? |
| Operating Junction Temperature (TJ) | -55 to 175 | ??C |
| نوع الحزمة | TO-247 | ?? |
A5G35H055NT4 Key Features
- مقاومة منخفضة عند التشغيل: The device provides a maximum RDS(على) of 0.055 ??, minimizing conduction losses and enhancing power efficiency in switching applications.
- High Voltage Rating: With a drain-source voltage rating of 550 V, it supports use in high-voltage environments such as industrial motor drives and power inverters.
- Robust Thermal Performance: Operating junction temperatures up to 175??C ensure reliable function under elevated thermal stress, reducing cooling requirements and improving longevity.
- Optimized Gate Charge: A total gate charge of 45 nC facilitates fast switching speeds with lower gate drive power, improving overall system efficiency.
A5G35H055NT4 Advantages vs Typical Alternatives
This device stands out for its combination of low on-resistance and high voltage capability, providing superior efficiency and robustness compared to typical MOSFETs in similar classes. Its enhanced thermal tolerance and optimized gate charge allow for more reliable switching and reduced power dissipation, making it an ideal choice in applications demanding both performance and durability.
🔥 المنتجات الأكثر مبيعًا
التطبيقات النموذجية
- Industrial motor control systems requiring efficient power switching and thermal reliability in harsh operating conditions.
- Power inverters used in renewable energy systems such as solar and wind power conversion.
- Switch-mode power supplies (SMPS) where fast switching and low conduction losses are critical.
- General-purpose high-voltage DC-DC converters and power management modules.
A5G35H055NT4 Brand Info
The A5G35H055NT4 is manufactured by a leading semiconductor company recognized for delivering reliable power devices tailored to industrial applications. This product reflects the brand??s commitment to quality, innovation, and adherence to rigorous testing standards. Designed to meet the demands of modern power electronics, it benefits from advanced fabrication techniques and comprehensive technical support, ensuring seamless integration and dependable operation in diverse industrial environments.
الأسئلة الشائعة
ما هو الحد الأقصى لمعدل جهد مصدر التصريف لهذا الجهاز؟
The device is rated for a maximum drain-source voltage of 550 V, making it suitable for high-voltage industrial and power conversion applications where voltage spikes and high operating voltages are common.
🌟 المنتجات المميزة
How does the low RDS(على) value affect performance?
A low on-resistance reduces conduction losses significantly during operation, which improves overall efficiency and reduces heat generation. This contributes to better energy savings and reliability in power switching circuits.
ما نوع الحزمة المستخدمة لهذا المكون؟
The device comes in a TO-247 package, which offers excellent thermal dissipation capabilities and mechanical robustness, facilitating easier mounting and heat management in industrial power modules.
📩 اتصل بنا
What are the typical operating temperature limits?
The junction temperature range spans from -55??C to 175??C, enabling the device to operate reliably in a wide variety of environmental conditions, including high-temperature industrial settings.
Is the gate charge optimized for fast switching?
Yes, with a total gate charge of 45 nC, the device supports fast switching speeds while minimizing the gate drive power required, which enhances overall system efficiency and reduces electromagnetic interference.
