AEDR-8710-102 Overview
The AEDR-8710-102 is a high-performance infrared phototransistor designed for precise optical sensing applications. It features a silicon-based phototransistor with a wide spectral response ideal for detecting near-infrared light. This device offers fast response times, low dark current, and high sensitivity, making it suitable for industrial systems requiring accurate light detection and signal conversion. Compact and robust, it supports reliable operation in diverse environments. Engineers and sourcing specialists can rely on this phototransistor to enhance system efficiency and signal integrity. For detailed product inquiries, visit الشركة المصنعة للدوائر المتكاملة.
AEDR-8710-102 Technical Specifications
| المعلمة | المواصفات |
|---|---|
| Phototransistor Type | Silicon NPN |
| Peak Sensitivity Wavelength | 940 نانومتر |
| جهد المُجمِّع-المرسل (VCEO) | 30 V (max) |
| Collector Current (IC) | 20 mA (max) |
| Rise Time | ?? 5 ??s |
| Fall Time | ?? 5 ??s |
| Dark Current | ?? 100 nA |
| نوع الحزمة | Standard 3-pin epoxy package |
| نطاق درجة حرارة التشغيل | -25??C to +85??C |
AEDR-8710-102 Key Features
- High Sensitivity Phototransistor: Enables accurate detection of near-infrared light, improving signal fidelity in optical sensing applications.
- Fast Response Time: Rise and fall times under 5 microseconds support high-speed switching and rapid signal processing.
- Low Dark Current: Minimizes noise and enhances reliability in low-light conditions, ensuring stable operation over time.
- Wide Operating Temperature: Suitable for use in industrial environments with temperature ranges from -25??C to +85??C.
- Robust Epoxy Package: Provides mechanical protection and long-term durability for demanding applications.
AEDR-8710-102 Advantages vs Typical Alternatives
This phototransistor stands out for its superior sensitivity at 940 nm, allowing more precise light detection compared to standard infrared sensors. Its low dark current reduces false signals, enhancing accuracy in low-illumination scenarios. Fast switching times improve system responsiveness, while a wide operating temperature range ensures reliability in harsh environments. Together, these factors make it a preferred choice for engineers requiring dependable, high-performance optical sensors.
🔥 المنتجات الأكثر مبيعًا
التطبيقات النموذجية
- Infrared remote control receivers in consumer electronics, enabling reliable signal detection with minimal interference and fast response.
- Optical switches and encoders used in industrial automation for precise position and motion sensing.
- Light barrier systems for object detection and safety interlocks in manufacturing lines.
- Proximity sensors in robotics and automated guided vehicles to ensure accurate environmental awareness.
AEDR-8710-102 Brand Info
The AEDR-8710-102 is part of a trusted product line from a leading semiconductor manufacturer renowned for quality infrared components. Designed with stringent industrial standards, this phototransistor delivers consistent performance in a compact form factor. Its proven reliability and compatibility with standard circuit designs make it a go-to solution for engineers developing optical sensing modules across multiple sectors.
الأسئلة الشائعة
What type of phototransistor technology does this device use?
This device employs a silicon NPN phototransistor technology optimized for near-infrared light detection. The silicon material ensures a stable spectral response around 940 nm, which is ideal for common IR sensing applications.
🌟 المنتجات المميزة
Can this phototransistor operate reliably in industrial temperature ranges?
Yes, it supports an operating temperature range from -25??C to +85??C, making it suitable for many industrial environments where temperature fluctuations are common.
What is the maximum collector current the device can handle?
The maximum collector current rating is 20 mA, which aligns with typical design requirements for phototransistor-based sensors without compromising device integrity.
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How fast can this phototransistor respond to changes in light intensity?
With rise and fall times typically under 5 microseconds, the device facilitates rapid switching and accurate detection in dynamic lighting conditions, supporting applications requiring high-speed optical sensing.
Is the device package suitable for rugged industrial use?
The phototransistor is housed in a standard 3-pin epoxy package that offers good mechanical protection and resistance to environmental factors, ensuring longevity and reliable operation in demanding industrial settings.
