AFV09P350-04GNR3 Overview
The AFV09P350-04GNR3 is a high-performance power MOSFET designed for industrial applications requiring robust switching and efficient power management. Engineered to deliver low on-resistance and high current capability, this device supports enhanced energy efficiency and thermal performance in demanding environments. Its optimized package and electrical characteristics make it ideal for power conversion, motor control, and power supply designs. Sourcing specialists and engineers rely on this component for reliable operation and seamless integration into complex electronic systems. For detailed technical insights and supply options, visit the IC-Hersteller.
AFV09P350-04GNR3 Technical Specifications
| Parameter | Spezifikation |
|---|---|
| Drain-Source-Spannung (VDS) | 350 V |
| Kontinuierlicher Drain-Strom (ID) | 9 A |
| Einschalt-Widerstand (RDS(ein)) | 0.09 ?? at VGS=10 V |
| Gate-Schwellenspannung (VGS(th)) | 2.0 V (min) ?C 4.0 V (max) |
| Total Gate Charge (Qg) | 23 nC |
| Verlustleistung (PD) | 40 W |
| Betriebstemperaturbereich | -55° C bis +150° C |
| Paket Typ | TO-220 |
AFV09P350-04GNR3 Key Features
- High Voltage Capability: Supports up to 350 V drain-source voltage, enabling use in high-voltage power conversion and industrial control applications.
- Low On-Resistance: Delivers 0.09 ?? RDS(ein) at 10 V gate drive, reducing conduction losses and improving overall efficiency.
- Robust Thermal Handling: With a maximum junction temperature of 150??C and 40 W power dissipation, it ensures reliable performance under demanding thermal conditions.
- Efficient Switching: Total gate charge of 23 nC allows for faster switching speeds, minimizing switching losses in high-frequency applications.
AFV09P350-04GNR3 Advantages vs Typical Alternatives
This MOSFET provides a superior balance of voltage rating and conduction efficiency compared to typical alternatives. Its low gate charge and minimal on-resistance translate to reduced power loss and heat generation. Additionally, the wide operating temperature range and robust package design improve system reliability, making it an excellent choice for industrial power management where accuracy and durability are critical.
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Typische Anwendungen
- Power Supply Circuits: Ideal for switching regulators and DC-DC converters requiring reliable high-voltage operation and efficient switching performance.
- Motor Drive Control: Suitable for driving motors in industrial automation with its high current and voltage handling capabilities.
- Lighting Systems: Effective in electronic ballasts and LED drivers where power efficiency and thermal management are essential.
- Industrial Inverters: Supports inverter circuits with demanding voltage and switching frequency requirements.
AFV09P350-04GNR3 Brand Info
This device is part of a specialized product lineup designed by a leading semiconductor manufacturer focused on power MOSFETs for industrial and power management applications. Known for precision engineering and quality, the product reflects the brand??s commitment to delivering components that meet stringent performance and reliability standards. Its robust design and comprehensive datasheet support make it a trusted choice for engineers sourcing high-voltage MOSFETs.
FAQ
What is the maximum voltage rating of this MOSFET?
The maximum drain-to-source voltage rating is 350 V, making it suitable for applications involving high-voltage power switching and conversion.
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How does the on-resistance affect performance?
Lower on-resistance reduces conduction losses during operation, improving efficiency and reducing heat dissipation. This device features an RDS(ein) of 0.09 ?? at a 10 V gate drive, optimizing power delivery.
What package type does the component use and why is it important?
The device is housed in a TO-220 package, which provides excellent thermal conductivity and ease of mounting for heat sinks, supporting effective thermal management in power circuits.
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Can this MOSFET operate in a wide temperature range?
Yes, it supports an operating junction temperature range from -55??C to +150??C, ensuring reliable function in harsh industrial environments.
Is the total gate charge low enough for high-frequency switching?
With a total gate charge of 23 nC, the MOSFET allows for efficient switching at higher frequencies, minimizing switching losses and enhancing overall system efficiency.
