2N2369AUBC/TR Overview
The 2N2369AUBC/TR is a high-speed NPN bipolar junction transistor designed for switching and amplification applications in industrial and consumer electronics. Featuring a robust gain bandwidth product and low saturation voltage, this transistor ensures efficient signal processing and reliable operation under various load conditions. Its compact surface-mount package supports integration in modern circuit designs where space and thermal management are critical. Ideal for high-frequency switching and small-signal amplification, it provides engineers and sourcing specialists with a dependable component that balances performance and cost-effectiveness. For detailed technical support and sourcing options, visit IC-Hersteller.
2N2369AUBC/TR Key Features
- High gain bandwidth: Enables fast switching speeds, enhancing performance in high-frequency circuits.
- Low collector-emitter saturation voltage: Reduces power loss and heat generation during operation, improving overall efficiency.
- Surface-mount packaging: Facilitates compact PCB layouts and automated assembly, saving space and manufacturing time.
- Breiter Betriebsspannungsbereich: Supports versatility across multiple circuit designs and power requirements.
2N2369AUBC/TR Technical Specifications
| Parameter | Wert | Einheit | Notes |
|---|---|---|---|
| Kollektor-Emitter-Spannung (VCEO) | 40 | V | Maximum voltage between collector and emitter |
| Kollektor-Basis-Spannung (VCBO) | 60 | V | Maximum voltage between collector and base |
| Emitter-Basis-Spannung (VEBO) | 5 | V | Maximum voltage between emitter and base |
| Kollektorstrom (IC) | 0.6 | A | Continuous collector current rating |
| Verlustleistung (PD) | 0.625 | W | Maximum power dissipation at 25??C |
| Übergangsfrequenz (fT) | 100 | MHz | Frequency at which current gain drops to unity |
| DC-Stromverstärkung (hFE) | 100?C300 | Unitless | Typical current gain range at IC = 10 mA |
| Storage Temperature Range | -65 bis +150 | ??C | Maximum allowable storage temperature |
| Betriebstemperaturbereich | -55 to +150 | ??C | Recommended junction temperature range |
2N2369AUBC/TR Advantages vs Typical Alternatives
This transistor offers superior switching speed and a high gain bandwidth compared to standard bipolar junction transistors, enabling enhanced performance in high-frequency and fast-switching applications. Its low saturation voltage minimizes power loss, which improves energy efficiency and thermal management. Additionally, the surface-mount package supports modern automated assembly processes, making it more cost-effective and reliable versus traditional through-hole alternatives.
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Typische Anwendungen
- High-frequency switching circuits requiring fast response times and efficient power handling, such as in signal drivers and pulse amplifiers.
- Low-power amplification stages in analog and digital communication equipment.
- General-purpose switching in industrial control systems where compact size and reliability are critical.
- Interface circuits between microcontrollers and higher power devices in embedded system designs.
2N2369AUBC/TR Brand Info
The 2N2369AUBC/TR is a product offered by leading semiconductor manufacturers recognized for stringent quality control and robust performance standards. This transistor benefits from advanced manufacturing processes that ensure consistent electrical characteristics and long-term reliability. Designed to meet the demands of industrial and consumer electronics sectors, it reflects the brand??s commitment to providing precise, durable, and efficient semiconductor components that integrate seamlessly into diverse applications.
FAQ
What are the key electrical limits I need to be aware of when using this transistor?
The maximum collector-emitter voltage is 40 V, and the maximum collector current is 0.6 A. The transistor also has a maximum power dissipation of 0.625 W at 25??C. Exceeding these limits can damage the device or cause unreliable operation.
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Can this transistor be used in high-frequency amplification circuits?
Yes, with a transition frequency of approximately 100 MHz, it is suitable for high-frequency applications, including RF amplification and fast switching circuits. Its gain bandwidth product supports stable operation at these frequencies.
What packaging type does this component use, and what are the benefits?
This device is supplied in a surface-mount package, which allows for compact PCB designs, improved thermal performance, and compatibility with automated soldering processes, making it ideal for modern electronics manufacturing.
📩 Kontakt
How does the low collector-emitter saturation voltage benefit my circuit design?
A low saturation voltage reduces power loss during transistor conduction, which increases the overall efficiency of switching applications and helps maintain lower junction temperatures, thereby enhancing device reliability.
Is the 2N2369AUBC/TR suitable for use in harsh environmental conditions?
Yes, it is rated for operation within a wide temperature range from -55??C to +150??C, making it suitable for use in industrial environments where temperature extremes may occur. Proper thermal management is still recommended for optimal performance.
