2N2907AUB/TR PNP-Transistor von Texas Instruments, allgemeine Anwendung, TO-92-Gehäuse

  • This transistor functions as a PNP bipolar junction transistor, enabling efficient current amplification in various circuits.
  • The device supports moderate voltage and current levels, ensuring stable operation in standard switching and amplification tasks.
  • Its TO-92 package offers a compact footprint, facilitating easy integration on crowded printed circuit boards.
  • Ideal for general-purpose amplification and switching, it helps improve signal control in audio or low-power electronic devices.
  • Manufactured with quality control processes, it provides consistent performance and long-term reliability in electronic applications.
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产品上方询盘

2N2907AUB/TR Overview

The 2N2907AUB/TR is a PNP bipolar junction transistor designed for general-purpose amplification and switching applications. It offers reliable operation with a maximum collector current of 600mA and a collector-emitter voltage rating up to 60V, making it suitable for medium power circuits. The transistor??s complementary NPN counterpart and robust packaging ensure versatility in various circuit designs. Manufactured to meet stringent quality standards, the 2N2907AUB/TR delivers consistent performance in industrial, automotive, and consumer electronics environments, providing engineers and sourcing specialists with a dependable solution. For more detailed product info and sourcing, visit IC-Hersteller.

2N2907AUB/TR Key Features

  • High collector current capability: Supports up to 600mA, enabling effective switching and amplification in medium power applications.
  • Wide voltage ratings: Collector-emitter voltage up to 60V ensures compatibility with various circuit voltage levels.
  • Complementary transistor pairing: Designed to pair with the 2N2222A for push-pull configurations, enhancing circuit design flexibility.
  • Robust TO-92 package: Provides reliable thermal performance and ease of mounting on through-hole PCBs.

2N2907AUB/TR Technical Specifications

ParameterSpezifikation
Transistor TypPNP Bipolar Junction Transistor
Kollektor-Emitter-Spannung (Vceo)60 V
Collector-Base Voltage (Vcbo)60 V
Emitter-Base Voltage (Vebo)5 V
Kollektorstrom (Ic)600 mA
Power Dissipation (Ptot)625 mW (typical, depending on mounting)
Stromverstärkung (hFE)100 to 300 (varies by test condition)
Übergangsfrequenz (fT)100 MHz (typisch)
Paket TypTO-92 (Plastic Epoxy)

2N2907AUB/TR Advantages vs Typical Alternatives

Compared to typical general-purpose PNP transistors, this device offers a higher collector current rating and voltage tolerance, improving reliability in medium power switching and amplification. Its well-defined gain characteristics and robust packaging deliver consistent performance, while compatibility with common complementary transistors aids in seamless circuit integration. These factors make it a preferred choice for engineers seeking dependable transistor solutions with predictable behavior.

Typische Anwendungen

  • Switching circuits requiring up to 600mA collector current and moderate voltage handling, such as relay drivers and low-power motor controls.
  • Amplifier stages in audio and signal processing circuits where linear gain and stability are critical.
  • Complementary push-pull output stages in analog and digital circuits, leveraging the device??s PNP polarity.
  • General-purpose electronic designs in automotive, industrial, and consumer devices where robustness and ease of use are essential.

2N2907AUB/TR Brand Info

This transistor is produced under strict quality controls by industry-recognized manufacturers specializing in semiconductor components. The 2N2907AUB/TR is part of a long-established family of bipolar junction transistors known for their reliability and versatility. Its brand heritage ensures comprehensive datasheet support, compliance with global standards, and availability in multiple distribution channels for industrial and commercial applications.

FAQ

What is the maximum collector current rating for this transistor?

The transistor supports a maximum collector current of 600mA, making it suitable for medium power applications such as driving relays, LEDs, or small motors without the need for additional current amplification stages.

Kann dieser Transistor in Hochfrequenzanwendungen eingesetzt werden?

Yes, the device features a typical transition frequency (fT) of about 100 MHz, which allows it to operate effectively in moderately high-frequency amplifier and switching circuits, though it may not be ideal for very high-frequency RF applications.

In welchem Gehäuse befindet sich dieser Transistor?

It is housed in a TO-92 plastic epoxy package, which offers easy through-hole mounting and good thermal dissipation for typical PCB layouts in general-purpose electronic circuits.

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产品中间询盘

Is this transistor suitable for complementary push-pull amplifier designs?

Yes, it is designed as a PNP transistor complement to widely used NPN devices, enabling push-pull configurations for audio amplifiers, signal drivers, and switching stages that require matched transistor pairs.

What are the important voltage limitations to consider?

The maximum collector-emitter and collector-base voltages are both rated at 60V, while the emitter-base voltage should not exceed 5V to prevent breakdown. Staying within these limits ensures safe and reliable device operation.

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