2N2907AUBP/TR PNP-Transistor von ON Semiconductor - TO-252-Gehäuse, hohe Verstärkung

2N2907AUBP/TR Overview

The 2N2907AUBP/TR is a high-performance PNP bipolar junction transistor designed for general-purpose switching and amplification in industrial and electronic applications. Featuring a robust collector current rating and reliable gain characteristics, this device supports efficient operation in diverse circuits. Its complementary transistor design and proven silicon planar technology ensure stable performance over a wide temperature range. Engineered for demanding environments, the 2N2907AUBP/TR offers a balance of durability and electrical precision, making it ideal for engineers and sourcing specialists focusing on dependable semiconductor components. Available through IC-Hersteller, this transistor supports efficient integration into modern electronic designs.

2N2907AUBP/TR Key Features

• High collector current capability: Supports up to 600 mA continuous current, enabling robust switching and signal amplification in power-sensitive applications.
• Complementary transistor design: Ideal for push-pull amplifier stages and complementary circuits, enhancing overall system efficiency and linearity.
• Großer Spannungsbereich: Collector-emitter voltage up to 60 V ensures operation under various supply conditions without degradation.
• Niedrige Sättigungsspannung: Minimizes power loss during switching, improving device efficiency and thermal management in compact systems.

2N2907AUBP/TR Technical Specifications

2N2907AUBP/TR Advantages vs Typical Alternatives

This PNP transistor offers a combination of higher collector current rating and wide voltage tolerance compared to standard alternatives, delivering improved reliability in switching and amplification circuits. Its low saturation voltage reduces power dissipation, enhancing efficiency and thermal stability. The device??s gain characteristics support precise signal control, making it a preferred choice for engineers requiring dependable performance in industrial and consumer electronics.

Typische Anwendungen

• General-purpose switching: Ideal for controlling loads in low-to-medium power applications such as relay drivers and LED drivers, ensuring fast and reliable switching.
• Amplifier circuits: Suitable for audio preamplifier stages and signal amplification where linearity and gain stability are critical.
• Complementary push-pull stages: Works efficiently with complementary NPN transistors in output stages for power amplifiers and motor control circuits.
• Signal processing: Used in analog signal conditioning circuits in industrial control and instrumentation systems requiring consistent transistor performance.

2N2907AUBP/TR Brand Info

The 2N2907AUBP/TR is produced under stringent quality standards by a leading semiconductor manufacturer known for delivering reliable and high-quality bipolar transistors. This component is part of a well-established product line that emphasizes durability, electrical precision, and ease of integration into complex electronic assemblies. The brand??s commitment to consistent performance and comprehensive testing ensures that the transistor meets industrial reliability criteria and supports optimized circuit design.

FAQ

What is the maximum collector current rating of this transistor?

The maximum continuous collector current is rated at 600 mA. This allows the transistor to handle moderate power switching and amplification tasks without compromising reliability or device integrity.

Kann dieser Transistor in Hochfrequenzanwendungen eingesetzt werden?

With a gain bandwidth product (f_T) of approximately 100 MHz, this transistor is suitable for many moderate-frequency applications, including audio and signal processing circuits, but it may not be optimal for very high-frequency RF designs.

In welchem Gehäuse befindet sich dieser Transistor?

This device is supplied in a TO-92 package, which is widely used for through-hole mounting with easy-handling characteristics in prototyping and production environments.

How does the transistor perform in terms of power dissipation?

The maximum power dissipation is rated at 625 mW, allowing it to operate efficiently within typical thermal limits when proper heat management techniques are applied.

Is this transistor compatible with complementary NPN types for push-pull circuits?

Yes, the transistor is designed as a PNP device to complement NPN counterparts in push-pull configurations, making it effective for use in amplifier output stages and switching circuits requiring matched transistor pairs.