CY62256VLL-70ZRIT 256Kb SRAM Memory IC – 70ns Access Time, 28-Pin SOP Package

  • This memory device provides fast and reliable static RAM storage, enabling efficient data access and processing.
  • The access time of 70 nanoseconds ensures timely read/write operations, which is critical for performance-sensitive applications.
  • The compact DIP package reduces board space, allowing for easier integration in constrained hardware designs.
  • Ideal for embedded systems requiring quick memory access, it supports smooth operation and responsive control tasks.
  • Manufactured with stringent quality controls, it offers dependable operation and long-term data retention stability.
产品上方询盘

CY62256VLL-70ZRIT Overview

The CY62256VLL-70ZRIT is a 32K x 8-bit low-power static RAM (SRAM) designed for high-performance embedded memory applications. Featuring a 70 ns access time, this device ensures fast data retrieval and storage, making it suitable for systems requiring quick and reliable memory access. It operates on a single 5V power supply and incorporates a TTL-compatible interface for seamless integration with various digital systems. The compact 28-pin TSOP II package enhances board space efficiency, supporting demanding industrial and commercial electronics applications. For further technical details and procurement, visit IC-Hersteller.

CY62256VLL-70ZRIT Technical Specifications

ParameterSpezifikation
Speichergröße32K x 8 bits
Zugriffszeit70 ns
Betriebsspannung5 V ?? 10%
Input/Output TypeTTL Compatible
Paket Typ28-pin TSOP II
Standby Current10 ??A (Max) at 5 V
Betriebstemperaturbereich0??C to +70??C
Data Retention Voltage2.0 V (Min)
Chip Enable (CE) and Output Enable (OE)Active Low
Write Enable (WE)Active Low

CY62256VLL-70ZRIT Key Features

  • High-Speed Access: 70 ns access time ensures rapid data processing, crucial for real-time applications and reducing system bottlenecks.
  • Niedriger Stromverbrauch: Standby current as low as 10 ??A minimizes power usage during inactive periods, extending battery life in portable devices.
  • TTL-Compatible I/O: Enables straightforward interface with standard digital logic families, simplifying design and integration.
  • Robust Package: 28-pin TSOP II package offers a compact footprint, optimizing PCB layout and manufacturing efficiency.

CY62256VLL-70ZRIT Advantages vs Typical Alternatives

This SRAM module provides a superior balance of speed and power efficiency compared to typical alternatives. Its 70 ns access time and low standby current make it ideal for applications demanding both high performance and energy savings. The TTL-compatible interface and compact TSOP II package improve system integration and reduce overall hardware complexity, enhancing reliability and simplifying design.

Typische Anwendungen

  • Embedded systems memory where fast read/write cycles and low power consumption are critical, such as industrial controllers and instrumentation.
  • Buffer memory in communication equipment requiring quick data access and reliable operation.
  • High-speed cache memory in computing devices to accelerate data throughput.
  • Portable electronic devices benefiting from low standby current for extended battery life.

CY62256VLL-70ZRIT Brand Info

The CY62256VLL-70ZRIT is part of a trusted line of SRAM products known for reliability and performance in industrial and commercial electronics. Designed with stringent quality standards, this device delivers consistent low power consumption and high-speed access, supporting a broad range of embedded memory applications. Its proven architecture and industry-standard packaging facilitate easy adoption in existing system designs, backed by comprehensive manufacturer support.

FAQ

What is the operating voltage range for this SRAM?

The device operates at a nominal 5 V power supply with a tolerance of ??10%, ensuring compatibility with standard 5 V digital systems. This voltage range supports stable operation and reliable memory retention.

How fast is the access time and what does it mean for system performance?

The 70 ns access time means data can be read from or written to the memory within 70 nanoseconds. This rapid access reduces latency in data handling, improving overall system speed, essential for time-sensitive applications.

What are the power consumption characteristics of this SRAM?

In standby mode, the device consumes a maximum of 10 ??A, significantly reducing power draw when inactive. This low current consumption is advantageous in battery-powered or energy-conscious applications.

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产品中间询盘

What package type does this SRAM use, and why is it important?

It is housed

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