CY74FCT162646ATPAC 16Mb SRAM Memory IC – High-Speed SRAM, 44-Pin TQFP Package

  • This device performs high-speed synchronous static RAM functions, enabling efficient data storage and retrieval in digital systems.
  • The CY74FCT162646ATPAC features a wide data bus width, supporting parallel data transfers to enhance processing speed.
  • Its compact package contributes to reduced board space, facilitating integration into dense circuit designs.
  • Ideal for memory expansion in embedded systems, it helps improve system responsiveness and data handling capabilities.
  • Engineered for consistent operation under varied conditions, it supports long-term reliability in electronic applications.
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CY74FCT162646ATPAC Overview

The CY74FCT162646ATPAC is a high-speed, 16-bit by 4,194,304-word synchronous static RAM designed for demanding industrial and computing applications. Offering fast access times and low power consumption, this memory device is optimized for systems requiring reliable, high-density storage with efficient data handling. Its advanced CMOS technology ensures stable operation across a wide temperature range, making it suitable for harsh environments. Designed with compatibility and performance in mind, it addresses critical needs in memory subsystems for embedded controllers, networking equipment, and data-intensive applications. For detailed specifications and sourcing, visit IC-Hersteller.

CY74FCT162646ATPAC Technical Specifications

ParameterSpezifikation
Memory Organization16,777,216 words ?? 16 bits (16M ?? 16)
Zugriffszeit10 ns (typical)
Betriebsspannung3.3 V ?? 0.3 V
Power Consumption (Operating)Maximum 660 mW
Paket TypThin Quad Flat Package (TQFP), 176 pins
Betriebstemperaturbereich?C40 ??C to +85 ??C
Schnittstelle TypSynchronous SRAM
Data Retention Voltage2.0 V (minimum)

CY74FCT162646ATPAC Key Features

  • High-Density Memory: 16M ?? 16 bit organization provides extensive data storage in a compact footprint, enabling complex applications with large memory requirements.
  • Fast Access Speed: 10 ns access time supports high-performance systems, reducing latency in data retrieval and improving overall system throughput.
  • Niedriger Stromverbrauch: Optimized CMOS design limits power usage, crucial for energy-efficient industrial and embedded applications.
  • Breiter Temperaturbereich: Reliable operation from ?C40 ??C to +85 ??C ensures stability in industrial and harsh environmental conditions.

CY74FCT162646ATPAC Advantages vs Typical Alternatives

This device offers a combination of high-speed synchronous operation and low power consumption which is superior to many standard asynchronous SRAMs. Its wide operating temperature and robust packaging increase reliability in industrial settings. The high-density memory array reduces board space requirements while maintaining quick access times, making it a preferable choice for engineers focused on performance and integration without sacrificing power efficiency.

Typische Anwendungen

  • Embedded systems requiring fast, high-capacity memory for real-time data processing and buffering in industrial automation and control.
  • Networking equipment such as switches and routers where low-latency memory access improves data throughput and packet handling.
  • High-performance computing modules that demand synchronous memory for cache and scratchpad storage.
  • Digital signal processing (DSP) systems benefiting from large, fast memory arrays for efficient algorithm execution.

CY74FCT162646ATPAC Brand Info

The CY74FCT162646ATPAC is part of a family of high-performance synchronous static RAM products known for their reliability and efficiency. Manufactured with advanced CMOS technology, this memory solution reflects the brand??s commitment to delivering components tailored for demanding industrial and computing environments. Its packaging and design standards align with industry requirements, ensuring seamless integration and long-term availability for system designers and sourcing specialists.

FAQ

What type of memory architecture does this device use?

The device utilizes a synchronous static RAM architecture, combining the speed benefits of synchronous operation with the stability of SRAM. This enables precise timing control and faster data access compared to asynchronous memories.

What is the significance of the 3.3 V operating voltage?

Operating at 3.3 V aligns the device with modern low-power digital systems, reducing overall power consumption while maintaining signal integrity and compatibility with common industry voltage standards.

How does the device handle temperature variations?

It is rated for operation over a wide industrial temperature range from ?C40 ??C to +85 ??C. This ensures reliable performance in environments with significant thermal stress

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