JAN2N1715-Transistor Overview
The JAN2N1715 transistor is a high-performance NPN bipolar junction transistor (BJT) designed for power amplification and switching applications. This transistor is manufactured to military standards, ensuring high reliability and robust operation under demanding conditions. With a collector current rating of up to 1.5A and a collector-emitter voltage of 60V, it suits a wide range of industrial and military-grade electronic circuits. Its complementary characteristics provide efficient gain and low saturation voltage, making it an excellent choice for industrial automation, power regulation, and signal amplification. For detailed component sourcing and support, visit IC-Hersteller.
JAN2N1715-Transistor Key Features
- Hohe Strombelastbarkeit: Supports collector current up to 1.5A, enabling robust power switching and amplification in demanding circuits.
- Voltage tolerance: Collector-emitter voltage of 60V ensures safe operation in medium-voltage applications, increasing design flexibility.
- Military-grade ruggedness: Built to meet JAN (Joint Army-Navy) specifications, providing superior reliability under extreme environmental conditions.
- Efficient gain characteristics: Current gain (hFE) range of 40 to 120 supports effective signal amplification with low distortion.
JAN2N1715-Transistor Technical Specifications
| Parameter | Wert | Einheit |
|---|---|---|
| Kollektor-Emitter-Spannung (Vceo) | 60 | V |
| Kollektorstrom (Ic) | 1.5 | A |
| Power Dissipation (Ptot) | 20 | W |
| Verstärkung Bandbreitenprodukt (fT) | 100 | MHz |
| Stromverstärkung (hFE) | 40 to 120 | ?? |
| Häufigkeit der Übergänge | 100 | MHz |
| Collector-Base Voltage (Vcbo) | 75 | V |
| Emitter-Base Voltage (Vebo) | 5 | V |
| Betriebstemperaturbereich | -65 bis +200 | ??C |
JAN2N1715-Transistor Advantages vs Typical Alternatives
This transistor stands out due to its military-grade reliability and extended operating temperature range, making it superior to commercial-grade devices in harsh environments. Its high current capacity combined with a robust voltage rating ensures safer and more efficient power handling. The efficient gain parameters and low saturation voltage contribute to improved signal accuracy and reduced power losses, giving it a clear advantage in precision industrial and military applications.
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Typische Anwendungen
- Power amplification circuits in industrial control systems requiring reliable high-current switching and linear amplification.
- Military and aerospace electronics where durability under extreme temperature and vibration is critical.
- Signal amplification in communication equipment demanding high gain and low noise performance.
- High-reliability power regulators and voltage stabilization modules in automated machinery.
JAN2N1715-Transistor Brand Info
The JAN2N1715 transistor is produced under stringent military standards, reflecting a commitment to quality and durability. This product is part of a legacy series of transistors widely recognized for their stable performance in critical applications. As a trusted component in the defense and aerospace sectors, it exemplifies the rigorous testing and validation processes synonymous with JAN-certified devices, ensuring dependable operation across a wide range of industrial electronics.
FAQ
What are the maximum voltage ratings for this transistor?
The transistor is rated for a maximum collector-emitter voltage (Vceo) of 60 volts, a collector-base voltage (Vcbo) of 75 volts, and an emitter-base voltage (Vebo) of 5 volts. These ratings define the maximum voltages the device can safely handle without breakdown.
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Is this transistor suitable for high-temperature environments?
Yes, it is designed to operate reliably within a temperature range of -65??C to +200??C, making it well-suited for applications that experience extreme temperature conditions, such as military and aerospace systems.
What is the typical current gain (hFE) range for this device?
The current gain varies from 40 to 120, which provides flexibility for amplification tasks requiring moderate to high gain, facilitating efficient signal processing in various circuit designs.
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Can this transistor handle high-frequency signals?
With a gain bandwidth product (fT) of 100 MHz, the transistor is capable of handling moderately high-frequency signals, making it appropriate for many industrial and communication applications that require fast switching and amplification.
What type of transistor is this and what package is it available in?
This device is an NPN bipolar junction transistor (BJT). It typically comes in a TO-39 metal can package, which offers excellent thermal dissipation and mechanical robustness favored in military and industrial applications.
