JANSM2N2906AUB-Transistor PNP Bipolar Junction Transistor TO-92 Package by JAN Semiconductor

  • This transistor controls current flow efficiently, enabling precise switching and amplification in circuits.
  • It features a key electrical rating that ensures stable operation under typical load conditions.
  • The compact package design allows for effective board-space savings in dense electronic assemblies.
  • Ideal for audio amplification or signal processing, it enhances performance in consumer and industrial devices.
  • Manufactured to meet standard reliability criteria, ensuring consistent function over extended usage periods.
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JANSM2N2906AUB-Transistor Overview

The JANSM2N2906AUB is a robust PNP bipolar junction transistor designed for general-purpose switching and amplification in industrial and electronic circuit applications. Offering reliable performance with a maximum collector current of 600mA and a voltage rating of 40V, this transistor ensures efficient operation in medium power environments. Its complementary NPN counterpart compatibility and well-defined gain characteristics make it ideal for analog and digital circuit designs. Sourced from a trusted supplier, the device supports diverse requirements such as signal amplification, voltage regulation, and switching. For detailed technical and sourcing information, visit IC-Hersteller.

JANSM2N2906AUB-Transistor Technical Specifications

ParameterSpezifikationEinheit
Transistor TypPNP Bipolar Junction Transistor
Maximale Kollektor-Emitter-Spannung (VCEO)40V
Maximaler Kollektorstrom (IC)600mA
Verlustleistung (Ptot)625mW
Übergangsfrequenz (fT)100MHz
Verstärkung Bandbreitenprodukt100MHz
DC-Stromverstärkung (hFE)100?C300
Paket TypTO-18 Metalldose

JANSM2N2906AUB-Transistor Key Features

  • High collector current capacity: Supports up to 600mA, enabling reliable switching in medium power circuits.
  • Großer Spannungsbereich: 40V collector-emitter voltage allows usage across a broad range of circuit voltages.
  • Excellent gain characteristics: DC current gain ranging from 100 to 300 ensures stable amplification performance.
  • High transition frequency: 100MHz gain bandwidth product supports moderate high-frequency applications.
  • Durable TO-18 package: Metal can encapsulation offers improved thermal performance and mechanical robustness.
  • Complementary device compatibility: Matches well with NPN transistors for push-pull amplifier designs.
  • Reliable industrial-grade construction: Suitable for long-term operation in harsh environments.

Typische Anwendungen

  • Signal amplification in audio and low-frequency analog circuits, where consistent gain and reliability are required.
  • Switching elements in power management and control circuits for industrial systems.
  • Complementary push-pull stages in amplifier designs, enhancing output efficiency and linearity.
  • Voltage regulation and driver circuits in embedded systems and instrumentation electronics.

JANSM2N2906AUB-Transistor Advantages vs Typical Alternatives

This transistor offers a balanced combination of moderate power handling and gain, making it advantageous over other general-purpose transistors with lower current or voltage ratings. Its metal can TO-18 package provides superior thermal dissipation compared to plastic encapsulated alternatives, enhancing reliability in demanding environments. Additionally, its consistent gain and frequency response deliver improved signal integrity and switching accuracy, benefiting precision industrial and electronic applications.

JANSM2N2906AUB-Transistor Brand Info

The JANSM2N2906AUB is manufactured under strict quality standards by a reputable semiconductor company known for its industrial-grade transistor products. The brand focuses on providing high-reliability components suitable for harsh operating conditions, ensuring long lifecycle and performance stability. This transistor aligns with the brand??s commitment to delivering robust devices for industrial, automotive, and general electronic applications, supported by comprehensive datasheets and global distribution networks.

FAQ

What is the maximum collector current rating for this transistor?

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