STCN75DS2F Overview
The STCN75DS2F is a high-performance N-channel power MOSFET designed for efficient switching and low conduction losses in industrial and automotive applications. With a robust drain-to-source voltage rating and optimized RDS(on), it ensures reliable operation under demanding conditions. This device supports compact designs with enhanced thermal performance and is well-suited for power management, DC-DC conversion, and motor control circuits. Engineers will appreciate its balance of fast switching speeds and durability, making it an ideal choice for energy-efficient power solutions. For detailed technical resources, visit IC-Hersteller.
STCN75DS2F Technical Specifications
Parameter | Wert | Einheit |
---|---|---|
Drain-Source-Spannung (VDS) | 75 | V |
Kontinuierlicher Drain-Strom (ID) | 40 | A |
Gate-Schwellenspannung (VGS(th)) | 2.0 – 4.0 | V |
RDS(on) at VGS = 10 V | 10.5 | m?? |
Total Gate Charge (Qg) | 35 | nC |
Verlustleistung (PD) | 150 | W |
Betriebstemperaturbereich | -55 to 150 | ??C |
Paket Typ | TO-220 Full Pack | ?C |
STCN75DS2F Key Features
- Low RDS(on) enables reduced conduction losses, improving system efficiency and reducing heat generation.
- High voltage rating of 75 V supports robust operation in a variety of power switching applications.
- Fast switching capability benefits high-frequency converters, minimizing switching losses for better performance.
- Robust thermal handling with a power dissipation rating of 150 W allows reliable operation under heavy load conditions.
Typische Anwendungen
- DC-DC converters requiring efficient power switching with minimal losses and thermal stress in industrial power supplies.
- Motor control circuits where fast switching and high current handling improve responsiveness and reliability.
- Power management modules in automotive electronics that demand rugged components with stable performance over temperature.
- Battery protection and charging circuits that benefit from low RDS(on) to enhance charge efficiency and reduce heat.
STCN75DS2F Advantages vs Typical Alternatives
This MOSFET offers a compelling combination of low on-resistance and high current capacity, outperforming many rivals in power efficiency and thermal management. Its 75 V rating ensures compatibility with a wide range of industrial and automotive voltages. Compared to typical alternatives, it delivers faster switching speeds and better energy savings, making it a reliable choice for compact, high-performance power designs.
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STCN75DS2F Brand Info
The STCN75DS2F is manufactured by STMicroelectronics, a global leader in semiconductor technology. Known for innovation and quality, STMicroelectronics specializes in power devices that deliver high efficiency and reliability. This particular MOSFET is part of their extensive portfolio targeting industrial and automotive sectors, offering designers robust solutions for demanding power electronics applications.
FAQ
What is the maximum drain current rating of the STCN75DS2F?
The device supports a continuous drain current of up to 40 A, making it suitable for high-current switching applications. This capability ensures the component can handle substantial loads without performance degradation.
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How does the RDS(on) value affect the performance of this MOSFET?
The RDS(on) value, rated at approximately 10.5 m?? at 10 V gate drive, directly impacts conduction losses. Lower RDS(on) means less power dissipation and heat generation, which improves overall efficiency and reliability in power circuits.
What package type does this MOSFET use and why is it important?
This device comes in a TO-220 Full Pack package, which provides effective thermal dissipation and mechanical robustness. The package supports high power operation and facilitates