STTH812G-TR Overview
The STTH812G-TR is a high-performance ultra-fast diode designed for industrial power electronics applications. Featuring a repetitive peak reverse voltage of 1200 V and a forward current rating of 8 A, it provides efficient rectification with low switching losses. This device integrates advanced semiconductor technology to ensure fast recovery times and reliable operation under demanding conditions. Suitable for use in power supplies, inverters, and motor drives, the STTH812G-TR delivers robust performance and thermal efficiency. Sourced from a reputable IC-Hersteller, it supports engineers and sourcing specialists in optimizing power conversion designs.
STTH812G-TR Technical Specifications
| Parameter | Wert | Einheit |
|---|---|---|
| Repetitive Peak Reverse Voltage (VRRM) | 1200 | V |
| Durchschnittlicher Vorwärtsstrom (IF(AV)) | 8 | A |
| Nicht-repetitiver Spitzen-Vorwärtsstoßstrom (IFSM) | 150 | A |
| Forward Voltage Drop (VF) at 8 A | 1.7 | V |
| Erholungszeit rückwärts (trr) | 50 | ns |
| Junction Temperature (Tj) | -65 to +175 | ??C |
| Storage Temperature Range (Tstg) | -65 to +175 | ??C |
| Paket Typ | TO-220AB | – |
STTH812G-TR Key Features
- Ultra-fast recovery time: Minimizes switching losses, improving efficiency in high-frequency power conversion systems.
- High voltage blocking capability: Supports up to 1200 V, suitable for demanding industrial applications requiring robust voltage tolerance.
- Hohe Stoßstromkapazität: Handles peak transient currents up to 150 A, enhancing reliability during power surges.
- Thermally stable operation: Wide junction temperature range ensures dependable performance in harsh thermal environments.
Typische Anwendungen
- Used in power supply rectification circuits where fast switching diodes improve efficiency and reduce electromagnetic interference.
- Suitable for DC-DC converters and inverters in industrial motor drive systems requiring robust and fast recovery diodes.
- Employed in freewheeling diode roles for inductive load switching, protecting circuits from voltage spikes.
- Ideal for solar panel inverters and UPS systems where high voltage and current handling are critical for stable operation.
STTH812G-TR Advantages vs Typical Alternatives
The STTH812G-TR offers superior switching speed and high surge current capability compared to standard recovery diodes, enabling enhanced efficiency and thermal management. Its robust voltage rating and low forward voltage drop reduce power dissipation, contributing to improved system reliability and compact design. This makes it an advantageous choice over typical silicon diodes in industrial power electronics where fast recovery and durability are essential.
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STTH812G-TR Brand Info
The STTH812G-TR is manufactured by STMicroelectronics, a global leader in semiconductor solutions. Known for innovation in power management devices, STMicroelectronics provides this ultra-fast diode as part of its extensive portfolio aimed at industrial and automotive power applications. The product benefits from ST??s rigorous quality standards and advanced fabrication technology, ensuring consistent performance and long-term reliability in demanding environments.
FAQ
Wie hoch ist die maximale wiederholte Spitzensperrspannung dieser Diode?
The maximum repetitive peak reverse voltage (VRRM) is 1200 V. This defines the maximum voltage the diode can withstand in the reverse direction without breaking down, making it suitable for high-voltage industrial circuits.
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How fast is the recovery time of the STTH812G-TR?
The reverse recovery time (trr) is approximately 50 nanoseconds. This ultra-fast recovery characteristic helps reduce switching losses in power electronics, improving overall efficiency in high-frequency applications.
Wie hoch ist der typische Durchlassspannungsabfall bei Nennstrom?
At an 8 A forward current, the typical forward voltage drop (VF) is about 1.7 V. A lower voltage drop reduces power dissipation and heat generation, which is beneficial for thermal management in compact designs
