MRFX1K80GNR5 Power MOSFET Transistor, High Efficiency, TO-220 Package

  • This device processes signals efficiently, enabling precise control in complex electronic systems.
  • Operating frequency supports smooth performance, ensuring responsive and accurate data handling.
  • The compact package design conserves board space, facilitating integration into dense circuit layouts.
  • Ideal for embedded applications requiring reliable real-time processing and low latency response.
  • Manufactured with rigorous quality controls to maintain consistent operation under varied conditions.
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产品上方询盘

MRFX1K80GNR5 Overview

The MRFX1K80GNR5 is a high-performance power MOSFET designed for efficient switching and robust power management in industrial electronics. Engineered to deliver optimized conduction and switching characteristics, it supports applications requiring low on-resistance and fast switching speeds, enabling improved system efficiency and thermal management. With a compact package and reliable operation under demanding conditions, this device is ideal for engineers seeking dependable semiconductor solutions for power conversion, motor control, and renewable energy systems. Available through Fabricant de circuits intégrés, it integrates seamlessly into modern electronic designs requiring consistent performance and durability.

MRFX1K80GNR5 Technical Specifications

ParamètresSpécifications
Maximum Drain-Source Voltage (VDS)80 V
Continuous Drain Current (ID) at 25??C50 A
RDS(on) (Max) at VGS = 10 V1.0 m??
Gate Threshold Voltage (VGS(th))1.5 ?C 3.0 V
Total Gate Charge (Qg)60 nC
Dissipation de puissance (PD)150 W
Plage de température de fonctionnement?C55??C to +175??C
Type d'emballageTO-220

MRFX1K80GNR5 Key Features

  • Faible résistance à l'allumage : The device exhibits a maximum RDS(on) of 1.0 m??, enabling reduced conduction losses and improved energy efficiency in power switching applications.
  • Capacité de courant élevée : Supports continuous drain currents up to 50 A at 25??C, making it suitable for demanding power stages and motor control circuits.
  • Fast Switching Performance: With a total gate charge of only 60 nC, it ensures rapid switching transitions, minimizing switching losses and enhancing overall system performance.
  • Robust Thermal Handling: The device supports power dissipation up to 150 W and an extended operating temperature range, ensuring reliable operation in harsh industrial environments.

MRFX1K80GNR5 Advantages vs Typical Alternatives

This power MOSFET offers superior performance through its combination of low on-resistance, high current handling, and fast switching characteristics. Compared to typical alternatives, it provides enhanced efficiency and reliability, reducing thermal stress and improving system integration. Its robust package and wide temperature range further ensure consistent operation in industrial settings, making it a preferred choice for engineers focusing on power density and long-term durability.

Applications typiques

  • Power converters and inverters for industrial motor drives, where efficient switching and thermal stability are critical for high-performance operation and energy savings.
  • Renewable energy systems such as solar inverters and wind power controllers that demand reliable high-current switching components under variable environmental conditions.
  • Power management modules in uninterruptible power supplies (UPS), ensuring clean and stable power delivery with minimal losses.
  • Switch-mode power supplies (SMPS) for industrial automation equipment requiring compact, efficient, and thermally robust MOSFET solutions.

MRFX1K80GNR5 Brand Info

This power MOSFET is part of a comprehensive portfolio offered by a leading semiconductor manufacturer, known for delivering innovative and high-quality discrete components tailored for industrial applications. The product combines advanced silicon process technology with rigorous quality control, ensuring consistent device performance. Designed with the needs of power electronics engineers in mind, it supports a broad range of demanding applications by balancing electrical performance with thermal and mechanical robustness.

FAQ

What is the maximum voltage rating of this MOSFET?

The device is rated for a maximum drain-to-source voltage of 80 volts, making it suitable for medium-voltage power management applications where reliable switching performance is required.

How does the on-resistance affect system efficiency?

Lower on-resistance results in reduced conduction losses during operation, which improves overall system efficiency and reduces heat generation, allowing for smaller heat sinks and more compact designs.

Can this MOSFET handle high temperatures in industrial environments?

Yes, it supports an operating temperature range from ?C55??C to +175??C, enabling reliable performance even in harsh thermal conditions commonly found in industrial applications.

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产品中间询盘

What package type is available for this device?

The MOSFET is provided in a TO-220 package, offering ease of mounting and effective heat dissipation for high power handling in industrial power electronics.

Is this device suitable for fast switching applications?

Absolutely. With a total gate charge of 60 nC, it supports fast switching speeds which minimize switching losses and improve the overall efficiency of power conversion circuits.

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