JANTX2N2222AUBP/TR Overview
The JANTX2N2222AUBP/TR is a high-performance NPN bipolar junction transistor designed for general-purpose amplification and switching applications. Engineered to meet stringent military standards, this transistor offers enhanced reliability and durability in demanding environments. Its robust construction ensures stable operation across a wide temperature range, making it suitable for industrial, aerospace, and defense electronics. With a focus on consistent gain and fast switching capabilities, the device supports efficient signal processing and power management tasks. Available through ICメーカー, it is an ideal solution for engineers seeking a reliable, proven transistor for critical applications.
JANTX2N2222AUBP/TR Key Features
- Military-grade reliability: Built to meet MIL-STD-750 standards, ensuring dependable performance under harsh environmental conditions.
- High current gain (hFE): Provides stable amplification, facilitating precise control in analog and digital circuits.
- Fast switching speed: Minimizes delay in signal transitions, improving efficiency in switching applications.
- 広い動作温度範囲： Supports operation from -55??C to +200??C, suitable for extreme industrial and aerospace environments.
JANTX2N2222AUBP/TR Technical Specifications
| パラメータ | 価値 | 単位 |
|---|---|---|
| Collector-Emitter Voltage (VCEO) | 40 | V |
| Collector-Base Voltage (VCBO) | 75 | V |
| Emitter-Base Voltage (VEBO) | 6 | V |
| Continuous Collector Current (IC) | 600 | mA |
| Power Dissipation (PC) | 625 | メートルダブリュー |
| Transition Frequency (fT) | 250 | MHz |
| DC Current Gain (hFE) | 100 to 300 | |
| 動作温度範囲 | -55 to +200 | ??C |
JANTX2N2222AUBP/TR Advantages vs Typical Alternatives
This transistor offers superior reliability and extended temperature tolerance compared to standard commercial-grade devices. Its MIL-STD qualification ensures consistent performance under environmental stress, while the high current gain and fast switching speed provide enhanced accuracy and efficiency in control circuits. The robust power dissipation rating supports demanding load conditions, making it a more dependable and versatile choice for industrial and defense applications.
ベストセラー商品
代表的なアプリケーション
- Signal amplification in aerospace and military communication systems requiring high reliability and stable gain across temperature extremes.
- Switching element in power management circuits where fast response time and durability are critical.
- General-purpose amplification in industrial control systems exposed to harsh environmental conditions.
- Interface circuits in avionics and rugged electronic devices demanding MIL-STD compliance for operational safety.
JANTX2N2222AUBP/TR Brand Info
The JANTX2N2222AUBP/TR is a product line designed to meet the rigorous demands of military and aerospace sectors. Manufactured under strict quality controls, this transistor embodies the trusted performance and reliability associated with JANTX series components. Its proven track record in high-stress environments underscores the brand??s commitment to delivering components that maintain integrity and function where failure is not an option.
よくあるご質問
What does the “JANTX” designation signify in this transistor?
The “JANTX” prefix indicates that this transistor is qualified to military standards, specifically MIL-STD-750. This means it undergoes rigorous testing for temperature, electrical characteristics, and reliability to ensure suitability for defense and aerospace applications.
注目商品
What is the maximum collector current for this device?
This transistor supports a continuous collector current of up to 600 milliamps, making it suitable for moderate power switching and amplification tasks in various industrial and military electronics.
Can this transistor operate at high temperatures?
Yes, the device is rated for operation from -55??C to +200??C, allowing it to function reliably in extreme thermal environments commonly encountered in aerospace and industrial applications.
お問い合わせ
What is the typical gain range (hFE) of this transistor?
The DC current gain (hFE) typically ranges from 100 to 300, which provides flexibility for signal amplification with predictable and stable performance across its operating conditions.
Is this transistor suitable for high-frequency switching?
With a transition frequency (fT) of approximately 250 MHz, this transistor supports fast switching applications, making it effective in circuits requiring rapid signal transitions and efficient switching performance.
