1N5819 Schottky Diode 1A 40V DO-41 Glass Package ?C Vishay Semiconductor

  • This diode provides fast switching for efficient power conversion and reduced energy loss in circuits.
  • It features a low forward voltage drop, improving overall circuit efficiency and thermal management.
  • The compact package design offers board-space savings, suitable for dense electronic assemblies.
  • Commonly used in power supply rectification, it enhances performance by minimizing voltage drop and heat.
  • Manufactured to meet industry standards, it ensures reliable operation under typical electrical stresses.
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1N5819 Overview

The 1N5819 is a widely used Schottky barrier rectifier diode designed for efficient low-voltage, high-speed switching applications. It offers a forward voltage drop significantly lower than traditional silicon diodes, minimizing power loss and enhancing overall circuit efficiency. With a maximum repetitive peak reverse voltage of 40V and a forward current rating of 1A, this diode is ideal for power supply rectification, voltage clamping, and freewheeling diode applications. Its robust construction ensures reliable operation in demanding electronic environments. For sourcing and detailed specifications, visit the ICメーカー ウェブサイトをご覧ください。

1N5819 Technical Specifications

パラメータ価値単位
Maximum Repetitive Peak Reverse Voltage (VRRM)40V
Maximum Average Forward Rectified Current (IF(AV))1A
Forward Voltage Drop (VF) at 1A0.45V (typical)
Reverse Current (IR) at Rated VRRM1mA (max)
Maximum Surge Forward Current (IFSM)25A
Junction Temperature Range (TJ)-65 to +125??C
パッケージタイプDO-41
Recovery Time (trr)Typically < 15ナノ秒

1N5819 Key Features

  • Low forward voltage drop: Reduces power dissipation and increases efficiency in power supply circuits.
  • Fast switching speed: Enhances performance in high-frequency rectification and switching applications.
  • High surge current capability: Ensures device robustness during transient load conditions, improving reliability.
  • Wide junction temperature range: Supports operation in diverse environments from industrial to consumer electronics.

代表的なアプリケーション

  • Power supply rectification in low-voltage, high-current circuits, where efficiency and fast switching are critical for performance and energy savings.
  • Voltage clamping and protection circuits to safeguard sensitive components from voltage spikes.
  • Freewheeling diode in DC motors and inductive loads to prevent voltage spikes during switching.
  • Battery charging circuits, providing low-loss rectification and enhancing charging efficiency.

1N5819 Advantages vs Typical Alternatives

This Schottky diode offers a significantly lower forward voltage drop compared to standard silicon diodes, resulting in reduced conduction losses and improved energy efficiency. Its fast recovery time supports high-frequency switching, which is critical for modern power electronics. The device??s high surge current rating and wide operating temperature range provide added reliability over typical rectifiers, making it a preferred choice for engineers seeking optimized performance and durability in industrial and consumer applications.

1N5819 Brand Info

The 1N5819 is a standard Schottky diode widely manufactured by multiple semiconductor suppliers globally. It is commonly available from leading brands such as ON Semiconductor, Vishay, and Diodes Incorporated, each ensuring compliance with industry standards and stringent quality controls. These brands offer the diode in the DO-41 package with consistent electrical characteristics, making the 1N5819 a trusted component for power rectification and protection in diverse electronic systems.

よくあるご質問

What is the typical forward voltage drop of the 1N5819 at its rated current?

The typical forward voltage drop at a forward current of 1A is approximately 0.45 volts. This low forward voltage drop is a key advantage for reducing power loss in circuits where efficiency is critical.

Can the 1N5819 be used in high-frequency switching applications?

Yes, the 1N5819 features a fast recovery time, typically less than 15 nanoseconds, making it suitable for high-frequency rectification and

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