2N1724-Transistor NPN Amplifier Transistor in TO-18 Metal Can Package by Motorola

  • This transistor amplifies electrical signals, enabling stronger output in various electronic circuits.
  • It features a specific current rating that ensures stable performance under typical operating conditions.
  • The compact package type allows for efficient use of board space in densely packed designs.
  • Ideal for switching applications where reliable control of current flow enhances device operation.
  • Manufactured to meet standard quality and reliability benchmarks for consistent long-term use.
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2N1724-Transistor Overview

The 2N1724 transistor is a reliable NPN bipolar junction transistor widely used for general-purpose amplification and switching applications. Designed to operate efficiently in low to medium power circuits, it offers stable performance with moderate gain and current handling capabilities. Its robust construction ensures dependable operation in diverse industrial environments. This transistor is ideal for engineers and sourcing specialists looking for a cost-effective component for analog signal amplification or switching tasks. For more detailed source information and procurement options, visit ICメーカー.

2N1724-Transistor Technical Specifications

パラメータ仕様
デバイス・タイプNPN Bipolar Junction Transistor
コレクタ・エミッタ間電圧 (V)CEO(最高経営責任者)30 V
コレクタ・ベース電圧 (V)中銀)40 V
エミッタ・ベース電圧 (V)EBO)5 V
コレクタ電流 (IC)100 mA
許容損失(Pトット)300 mW
直流電流利得(hFE)70 to 300 (varies by test conditions)
遷移周波数 (fT)100 MHz(代表値)
パッケージタイプTO-18 Metal Can

2N1724-Transistor Key Features

  • Medium power handling: Supports collector currents up to 100 mA, ensuring suitability for moderate load amplification and switching applications.
  • High gain range: Offers a DC current gain between 70 and 300, providing flexibility in circuit design for variable amplification needs.
  • Robust voltage ratings: Collector-emitter and collector-base voltage limits of 30 V and 40 V respectively, allowing usage in a wide range of low to medium voltage environments.
  • High transition frequency: Typical fT of 100 MHz supports high-speed switching and signal processing tasks in analog and digital circuits.
  • Durable TO-18 package: Metal can enclosure enhances thermal dissipation and mechanical reliability in industrial settings.

代表的なアプリケーション

  • Analog signal amplification in audio and instrumentation circuits where moderate gain and frequency response are required.
  • Switching elements in low power relay drivers and control logic circuits within industrial automation systems.
  • Buffer stages in sensor interface circuits to provide impedance matching and signal conditioning.
  • General-purpose transistor replacement in legacy equipment maintenance and repair projects requiring compatible specifications.

2N1724-Transistor Advantages vs Typical Alternatives

This transistor offers a balanced combination of voltage handling, gain, and frequency response that makes it preferable over many generic low-power transistors. Its robust TO-18 metal can package improves heat dissipation and reliability, while its moderate collector current and power ratings suit a broad spectrum of industrial applications. These advantages ensure dependable performance with consistent switching speeds and amplification accuracy compared to typical plastic-encapsulated alternatives.

2N1724-Transistor Brand Info

The 2N1724 transistor is a well-established device originally introduced by manufacturers specializing in semiconductor components for industrial electronics. It is commonly offered by multiple trusted suppliers adhering to JEDEC standard outlines, ensuring interchangeability and quality compliance. This transistor??s metal can package and standardized electrical characteristics reflect its legacy as a dependable component in analog and switching circuits. For engineers and sourcing experts, 2N1724 remains a versatile choice supported by long-term availability from reputable IC manufacturers.

よくあるご質問

What type of transistor is the 2N1724 and what are its main characteristics?

The 2N1724 is an NPN bipolar junction transistor designed primarily for general-purpose amplification and switching. It features a collector-emitter voltage rating of 30 V, collector current up to 100 mA, and

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