2N2605UB-Transistor NPN Bipolar Junction Transistor in TO-92 Package by ON Semiconductor

  • This transistor amplifies electrical signals, enabling efficient control in various electronic circuits.
  • Its voltage rating supports stable operation, ensuring consistent performance under typical load conditions.
  • The compact package design minimizes board space, facilitating integration into tight or portable device layouts.
  • Ideal for switching applications, it enhances responsiveness and efficiency in power management systems.
  • Manufactured to meet standard quality criteria, it offers reliable operation throughout its service life.
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2N2605UB-Transistor Overview

The 2N2605UB is a high-performance NPN bipolar junction transistor designed for medium power switching and amplification applications. Engineered to deliver reliable operation within a broad range of voltages and currents, this transistor excels in industrial and commercial electronics environments. Featuring robust electrical characteristics, including a maximum collector current of 500 mA and a collector-emitter voltage rating of 60 V, it is suitable for general-purpose and low to medium power tasks. The device??s dependable gain characteristics and stable performance enable engineers to design efficient switching circuits and amplification stages with confidence. For detailed sourcing and specifications, visit ICメーカー.

2N2605UB-Transistor Technical Specifications

パラメータ価値Units
TypeNPN Bipolar Junction Transistor
コレクタ・エミッタ間電圧 (V)CEO(最高経営責任者)60V
コレクタ・ベース電圧 (V)中銀)75V
エミッタ・ベース電圧 (V)EBO)5V
コレクタ電流 (IC)500mA
許容損失(Pトット)625メートルダブリュー
直流電流利得(hFE)40 to 300
遷移周波数 (fT)50MHz
動作温度範囲-65 to +200??C

2N2605UB-Transistor Key Features

  • High voltage tolerance: Supports collector-emitter voltages up to 60 V, enabling use in medium-voltage switching applications.
  • Wide current handling capability: Handles collector currents up to 500 mA, providing versatility for various amplification and switching tasks.
  • Stable gain range: DC current gain between 40 and 300 ensures reliable amplification performance across different operating conditions.
  • High transition frequency: With a transition frequency of 50 MHz, it supports moderately high-speed switching and amplifier designs.
  • Robust power dissipation: Rated for 625 mW, it can sustain moderate power loads without thermal failure, enhancing reliability.
  • 広い動作温度範囲: Suitable for harsh environments with operating temperatures from -65??C to +200??C, making it ideal for industrial applications.
  • Standardized TO-18 package: Facilitates easy integration into existing PCB layouts with proven mounting and thermal characteristics.

代表的なアプリケーション

  • Medium power switching circuits in industrial control systems, where reliable operation at moderate voltage and current levels is essential.
  • Low to medium frequency audio amplifiers requiring stable gain and linearity for signal integrity.
  • General-purpose amplification in signal processing, sensor interface, and driver stages.
  • Electronic test equipment where predictable transistor performance is critical for accurate measurement and control.

2N2605UB-Transistor Advantages vs Typical Alternatives

This transistor offers a balanced combination of voltage handling, current capacity, and gain stability that makes it advantageous over typical low-power transistors. Its ability to operate at high temperatures and dissipate moderate power loads increases reliability in demanding industrial environments. The device??s moderate transition frequency supports faster switching than many standard transistors, improving efficiency in control circuits. Overall, it provides a cost-effective solution with dependable performance where higher power or speed transistors may be excessive or more expensive.

2N2605UB-Transistor Brand Info

The 2N2605UB transistor

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