CY7C1021BV33-12VCT Overview
The CY7C1021BV33-12VCT is a high-performance 1M-bit (128K x 8) Static Random Access Memory (SRAM) device optimized for industrial and embedded systems requiring fast, reliable memory storage. Operating at a 3.3V power supply and featuring a 12 ns access time, it supports efficient data access with low power consumption. Its standard 28-pin TSOP packaging facilitates easy system integration, making it suitable for applications that demand stable operation and quick data retrieval. Designed and manufactured by ICメーカー, this memory solution balances speed, power efficiency, and robustness for demanding electronics environments.
CY7C1021BV33-12VCT Technical Specifications
| パラメータ | 仕様 |
|---|---|
| Memory Organization | 128K x 8 bits |
| アクセス時間 | 12 ns |
| 動作電圧 | 3.3 V ??0.3 V |
| Power Supply Current (ICC) | Max 135 mA (Operating) |
| Standby Current (ISB) | 10 ??A (TTL Inputs) |
| パッケージタイプ | 28-pin Thin Small Outline Package (TSOP) |
| Data Retention Voltage | 2.0 V (Min) |
| 動作温度範囲 | 0℃〜+70 |
CY7C1021BV33-12VCT Key Features
- Fast 12 ns Access Time: Enables rapid data retrieval, improving system throughput and responsiveness in performance-critical applications.
- 低消費電力： Operates efficiently at 3.3 V with minimal standby current, reducing overall system power requirements.
- Standard 28-pin TSOP Package: Offers a compact footprint that simplifies PCB layout and supports high-density memory configurations.
- Stable Operation Over Temperature Range: Ensures reliable performance from 0??C to 70??C, suitable for industrial and commercial environments.
CY7C1021BV33-12VCT Advantages vs Typical Alternatives
This SRAM device provides a compelling combination of fast access speed and low power consumption compared to typical asynchronous memories. Its 3.3 V operation reduces energy use without sacrificing performance, while the compact TSOP package improves integration in space-constrained designs. Reliability across a standard industrial temperature range further enhances its suitability for embedded applications, setting it apart from alternatives that may require higher voltages or offer slower access times.
ベストセラー商品
代表的なアプリケーション
- Embedded systems requiring high-speed volatile memory with low power consumption for efficient data handling and quick boot operations.
- Networking equipment where fast SRAM supports buffering and caching of data packets for optimized throughput.
- Industrial control systems demanding robust and reliable memory capable of operating continuously under varying temperature conditions.
- Consumer electronics that benefit from compact memory modules to maintain small device form factors without performance compromise.
CY7C1021BV33-12VCT Brand Info
The CY7C1021BV33-12VCT is a product from a leading semiconductor manufacturer known for delivering reliable, high-quality memory components. This SRAM is engineered to meet stringent industrial standards and is part of a broader portfolio of memory solutions designed to address diverse embedded and industrial applications. Its design emphasizes speed, power efficiency, and ease of integration, reflecting the manufacturer??s commitment to supporting advanced electronics development with dependable components.
よくあるご質問
What is the memory organization and capacity of this SRAM device?
This SRAM is organized as 128K words by 8 bits, providing a total memory capacity of 1 Mbit. This configuration is widely used in systems requiring moderate memory density with fast access times.
注目商品
What voltage levels does the device operate under? Can it handle low-voltage applications?
The device operates at a nominal voltage of 3.3 V with a tolerance of ??0.3 V. It supports data retention down to 2.0 V, which helps maintain stored information during low-power states, making it suitable for low-voltage