HMC220BMS8GETR Overview
The HMC220BMS8GETR is a high-performance gallium arsenide (GaAs) MMIC low noise amplifier designed for broadband RF and microwave applications. Covering a wide frequency range from 20 MHz to 6 GHz, it provides excellent gain, low noise figure, and high linearity, making it ideal for sensitive receiver front-end designs. Packaged in a compact 8-lead SOIC surface-mount package, this device facilitates easy integration into complex RF systems with minimal board space. Its robust design ensures consistent performance across varying temperatures and supply conditions, delivering reliable amplification for communications, radar, and test equipment applications. Available through ICメーカー, it suits demanding industrial and military-grade environments.
HMC220BMS8GETR Technical Specifications
| パラメータ | 仕様 |
|---|---|
| 周波数範囲 | 20 MHz to 6 GHz |
| Gain (Typical) | 17.5 dB at 2 GHz |
| Noise Figure (Typical) | 1.3 dB at 2 GHz |
| 入力リターン・ロス | ?? 10 dB across band |
| 出力リターン・ロス | ?? 12 dB across band |
| Output IP3 (OIP3) | 31 dBm at 2 GHz |
| 電源電圧 | +5 V DC |
| 消費電流 | 80 mA typical |
| パッケージタイプ | 8リードSOIC |
HMC220BMS8GETR Key Features
- 広い周波数範囲： Operates efficiently from 20 MHz to 6 GHz, enabling versatile use across multiple RF and microwave bands.
- Low Noise Figure: Provides a noise figure as low as 1.3 dB, enhancing system sensitivity for weak signal detection.
- High Gain Performance: Typical gain of 17.5 dB ensures adequate signal amplification for front-end applications.
- High Linearity: Output IP3 of 31 dBm supports improved signal fidelity and reduces distortion in high dynamic range environments.
- Compact SOIC Package: Small form factor facilitates integration into densely packed PCB layouts while maintaining thermal efficiency.
- Stable Operation: Robust design guarantees consistent performance over temperature and voltage variations, critical for industrial reliability.
HMC220BMS8GETR Advantages vs Typical Alternatives
This low noise amplifier offers superior noise performance combined with high gain and linearity, outclassing many traditional silicon-based amplifiers. Its broad frequency range and low current consumption make it efficient for multi-band systems. The compact packaging enhances integration flexibility, while its GaAs technology ensures better sensitivity and reliability under demanding operating conditions compared to typical alternatives.
ベストセラー商品
代表的なアプリケーション
- RF and Microwave Receiver Front-Ends: Ideal for use in communication systems and radar where low noise amplification is crucial to detect weak signals accurately.
- Test and Measurement Equipment: Enhances signal integrity in instrumentation that requires precise amplification over wide frequency ranges.
- Satellite Communications: Supports uplink and downlink applications by providing high gain and low noise for reliable signal reception.
- Military and Aerospace Systems: Robust performance in harsh environments ensures dependable operation in defense and avionics applications.
HMC220BMS8GETR Brand Info
The HMC220BMS8GETR is part of a family of high-quality RF and microwave components designed by a leading semiconductor manufacturer specializing in GaAs MMIC technology. This product line is recognized for its innovation in delivering low noise, high gain, and broad frequency coverage devices tailored for demanding industrial, aerospace, and defense applications. The brand’s commitment to quality and performance ensures that each amplifier meets stringent standards for reliability and efficiency in complex RF systems.
よくあるご質問
What is the typical noise figure of the HMC220BMS8GETR at 2 GHz?
The typical noise figure at
