JANSD2N3636UB-Transistor Overview
The JANSD2N3636UB is a high-performance NPN bipolar junction transistor optimized for switching and amplification in industrial and electronic applications. Designed for medium power operation, it offers robust current gain and voltage handling capabilities. Its packaging and electrical characteristics make it suitable for reliable integration in control circuits, power management modules, and signal amplification stages. Sourced from ICメーカー, this transistor delivers consistent performance with a focus on durability and efficiency under moderate thermal conditions.
JANSD2N3636UB-Transistor Technical Specifications
| パラメータ | 仕様 |
|---|---|
| トランジスタ・タイプ | NPN Bipolar Junction Transistor (BJT) |
| コレクタ・エミッタ間電圧 (V)CEO（最高経営責任者) | 60 V |
| コレクタ電流 (IC) | 0.8 A (800 mA) |
| 利得帯域幅積 (fT) | 100 MHz |
| 直流電流利得（hFE) | 30 to 300 (depending on IC and VCE) |
| 許容損失（PD) | 625 mW |
| 移行頻度 | 100 MHz |
| パッケージタイプ | TO-92 |
| 動作温度範囲 | -55℃～+150℃の範囲 |
JANSD2N3636UB-Transistor Key Features
- Medium power handling: Supports collector currents up to 0.8 A, enabling effective use in moderate power switching applications.
- High voltage tolerance: With a maximum collector-emitter voltage of 60 V, it offers reliable performance in circuits requiring moderate voltage margins.
- Wide gain bandwidth: The 100 MHz transition frequency allows for efficient amplification and switching at high speeds, benefiting signal processing tasks.
- Robust DC current gain range: Variable gain between 30 and 300 provides design flexibility for different biasing and amplification requirements.
- Compact TO-92 package: Enables easy integration in space-constrained board layouts while maintaining thermal efficiency.
- Wide temperature tolerance: Operates reliably from -55??C to +150??C, suitable for industrial environments.
代表的なアプリケーション
- Switching circuits in industrial control systems where moderate current and voltage handling is required, ensuring reliable operation under variable load conditions.
- General-purpose amplification for signal conditioning in analog electronic devices.
- Driver stages for relays or low-power motors in automation equipment.
- Interface circuits in embedded control modules where space and power efficiency are critical.
JANSD2N3636UB-Transistor Advantages vs Typical Alternatives
This transistor stands out for its balanced combination of moderate power capacity and high-frequency response, which many alternatives lack at similar cost and package sizes. The broad DC gain range enhances design adaptability, while the TO-92 package facilitates easy installation and thermal dissipation. Compared to typical small-signal transistors, it offers greater voltage and current handling, improving reliability and performance in industrial switching and amplification tasks.
ベストセラー商品
JANSD2N3636UB-Transistor Brand Info
The JANSD2N3636UB is manufactured under the JAN (Joint Army-Navy) standard, ensuring stringent quality and reliability criteria suitable for military and industrial-grade applications. This designation indicates compliance with rigorous testing and certification processes, providing enhanced durability and stable performance. The transistor is produced by a reputable semiconductor manufacturer specializing in robust, high-quality discrete components designed for demanding environments.
よくあるご質問
このトランジスタの最大コレクタ電流定格は？
The maximum collector current for this transistor is 0.8 A (800 mA). Operating within this limit ensures reliable switching and amplification performance without damaging the device.
