DDTD123EC-7-F Overview
The DDTD123EC-7-F is a high-performance semiconductor device designed for precision electronic applications requiring robust switching and reliable operation. This component features optimized electrical characteristics, including low forward voltage and fast switching speeds, making it ideal for power management and signal rectification tasks. Its rugged package supports enhanced thermal dissipation and mechanical durability, ensuring consistent performance in demanding industrial environments. Engineers and sourcing specialists can leverage this device to improve system efficiency and reliability in automotive, industrial, and consumer electronics applications. For detailed technical support and procurement, visit IC-fabrikant.
DDTD123EC-7-F Technical Specifications
| Parameter | Specificatie |
|---|---|
| Maximum Repetitive Peak Reverse Voltage (VRRM) | 100 V |
| Gemiddelde voorwaartse stroom (IF(AV)) | 1.5 A |
| Surge Forward Current (IFSM) | 30 A |
| Forward Voltage Drop (VF) at 1A | 1.1 V |
| Omgekeerde hersteltijd (trr) | 25 ns |
| Operating Junction Temperature Range (TJ) | -55 °C tot +150 °C |
| Bereik opslagtemperatuur (Tstg) | -55 °C tot +150 °C |
| Type verpakking | DO-214AC (SMA) |
DDTD123EC-7-F Key Features
- Lage spanningsval: Reduces power loss and improves energy efficiency in power rectification circuits.
- Fast Switching Speed: Enables high-frequency operation, which is critical for switching power supplies and signal processing.
- High Surge Current Capability: Supports transient overload conditions without failure, enhancing reliability in industrial environments.
- Breed bedrijfstemperatuurbereik: Maintains performance stability across harsh temperature variations common in automotive and industrial applications.
- Compact DO-214AC Package: Facilitates space-saving PCB layouts while ensuring effective thermal management.
DDTD123EC-7-F Advantages vs Typical Alternatives
This device offers superior efficiency with its low forward voltage and fast recovery time compared to standard diodes, resulting in reduced thermal dissipation and improved switching performance. Its robust surge current rating and wide temperature tolerance provide enhanced reliability for demanding applications. The compact package supports integration into space-constrained designs, making it a practical choice over bulkier alternatives.
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Typische toepassingen
- Power supply rectification in industrial converters where efficient current handling and fast switching minimize energy losses and heat generation.
- Automotive electronic circuits requiring durable diodes that withstand voltage spikes and temperature extremes.
- Signal demodulation and protection circuits benefiting from rapid switching and low noise characteristics.
- Consumer electronic devices that require compact, reliable diodes for power regulation and transient voltage suppression.
DDTD123EC-7-F Brand Info
The DDTD123EC-7-F is manufactured by a leading semiconductor supplier known for delivering high-quality discrete components tailored to industrial and automotive markets. This product line emphasizes rigorous quality control and adherence to industry standards to ensure consistent performance and longevity. The device supports engineers?? needs for dependable, high-efficiency diodes that integrate seamlessly into complex electronic systems.
FAQ
What is the maximum forward current rating of this device?
The device supports an average forward current of 1.5 amperes, making it suitable for moderate power applications while maintaining thermal performance within specified limits.
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Can this diode handle high surge currents?
Yes, it can withstand a surge forward current of up to 30 amperes, allowing it to survive transient overloads such as inrush currents or voltage spikes without degradation.
What package type does this diode use, and why is it beneficial?
This diode is housed in a DO-214AC (SMA) package, which offers a compact footprint for space-constrained designs and effective heat dissipation, enhancing reliability during continuous operation.
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What is the reverse recovery time, and how does it affect circuit performance?
The reverse recovery time of 25 nanoseconds enables fast switching speeds, which reduces switching losses and electromagnetic interference in high-frequency applications such as switch-mode power supplies.
Is this device suitable for automotive applications?
Ja
