1N5819UB1 Overview
The 1N5819UB1 is a high-efficiency Schottky barrier rectifier diode designed for low forward voltage drop and fast switching performance. Its robust construction supports a maximum repetitive peak reverse voltage, making it suitable for power supply, voltage clamping, and polarity protection applications. This device delivers reliable operation in compact surface-mount packaging, ensuring efficient thermal management and long-term durability. Engineers and sourcing specialists can leverage the 1N5819UB1??s optimized electrical characteristics to enhance power conversion efficiency and reduce power loss in industrial electronics systems. For detailed sourcing and product updates, visit IC Manufacturer.
1N5819UB1 Technical Specifications
| Parameter | Specification |
|---|---|
| Maximum Repetitive Peak Reverse Voltage (VRRM) | 40 V |
| Average Rectified Forward Current (IF(AV)) | 1 A |
| Forward Voltage Drop (VF) at 1 A | Typically 0.45 V |
| Reverse Current (IR) at VRRM | Max 1 mA |
| Junction Temperature Range (TJ) | -65??C to +125??C |
| Storage Temperature Range (TSTG) | -65??C to +150??C |
| Surge Forward Current (IFSM) | 30 A |
| Package Type | DO-41 axial lead or equivalent surface-mount options |
1N5819UB1 Key Features
- Low forward voltage drop: Minimizes power loss, improving overall circuit efficiency in DC power applications.
- Fast reverse recovery time: Enables high-frequency switching, reducing switching losses and electromagnetic interference.
- High surge current capability: Provides robustness against transient load conditions, enhancing system reliability.
- Wide operating temperature range: Supports deployment in harsh industrial environments without performance degradation.
Typical Applications
- Used in switching power supplies as a freewheeling diode to improve efficiency and reduce heat dissipation in power conversion circuits.
- Provides polarity protection in battery-powered devices, preventing damage from reverse voltage connections.
- Employed in voltage clamping circuits to safeguard sensitive components by limiting voltage spikes.
- Suitable for low voltage, high-frequency rectification in DC-DC converters and automotive electronics systems.
1N5819UB1 Advantages vs Typical Alternatives
This diode offers lower forward voltage drop and faster switching speeds compared to standard silicon diodes, resulting in improved power efficiency and reduced thermal stress. The Schottky barrier design ensures minimal reverse leakage current, increasing accuracy and reliability in sensitive industrial circuits. Its robust surge current rating and extended temperature tolerance make it a superior choice over generic rectifiers in demanding power management applications.
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1N5819UB1 Brand Info
The 1N5819UB1 is manufactured by multiple semiconductor suppliers specializing in discrete components for power management. Renowned brands producing this diode maintain strict quality controls to meet industrial-grade standards. Their versions of this Schottky diode are widely recognized for consistent electrical performance and long lifecycle under rigorous operating conditions. These manufacturers provide comprehensive datasheets and global support, ensuring seamless integration into industrial electronics designs.
FAQ
What is the maximum reverse voltage rating for this diode?
The maximum repetitive peak reverse voltage for this device is 40 volts, meaning it can safely block reverse voltages up to this value without breakdown under normal operating conditions.
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Can this diode handle high surge currents?
Yes, it supports a surge forward current of up to 30 amperes, allowing it to withstand short, high-current pulses typically encountered during startup or transient events.
What are the temperature limits for operation and storage?
The diode operates reliably within a junction temperature range from -65??C to +125??C and can be stored safely between -65??C and +150??C, making it suitable for various industrial environments.
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Why is the low forward voltage drop important in this diode?
A low forward voltage
