AFT20S015GNR1 N-Channel MOSFET Transistor – TO-252 Package, High Efficiency

  • Provides efficient power conversion to support stable device operation and reduce energy loss.
  • Features a key voltage rating suitable for common electronic circuits, ensuring compatibility and safety.
  • Compact package type enables board-space savings and simplifies integration into tight layouts.
  • Ideal for use in consumer electronics where reliable power supply improves overall device performance.
  • Designed with quality standards that enhance durability and maintain consistent performance over time.
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AFT20S015GNR1 Overview

The AFT20S015GNR1 is a high-performance MOSFET designed for efficient power switching in industrial and automotive applications. With a maximum drain-source voltage of 20V and a low on-resistance, it delivers optimal conduction efficiency, minimizing power loss and heat generation. This device supports fast switching speeds with robust avalanche energy ratings, ensuring reliability under demanding conditions. Its compact package enhances integration flexibility for space-constrained designs. Engineers and sourcing specialists will find this component ideal for optimizing system performance while maintaining cost-effectiveness. For detailed specifications and purchasing options, visit the IC Manufacturer website.

AFT20S015GNR1 Technical Specifications

ParameterSpecificationUnit
Drain-Source Voltage (VDS)20V
Continuous Drain Current (ID) @ 25??C15A
On-Resistance (RDS(on)) @ VGS=4.5V3.5m??
Gate Threshold Voltage (VGS(th))1.0 to 2.5V
Total Gate Charge (Qg)10nC
Power Dissipation (PD)50W
Operating Junction Temperature (TJ)-55 to +150??C
Package TypeSO-8?C

AFT20S015GNR1 Key Features

  • Low On-Resistance: Minimizes conduction losses, improving overall system efficiency and reducing thermal stress on components.
  • High Continuous Drain Current Capability: Supports currents up to 15A, enabling robust performance in demanding power switching applications.
  • Fast Switching Speed: Low total gate charge facilitates rapid switching, reducing switching losses and enhancing efficiency in high-frequency circuits.
  • Wide Operating Temperature Range: Ensures reliable operation in harsh environments, from -55??C to +150??C junction temperature.
  • Compact SO-8 Package: Supports high-density PCB layouts, simplifying integration into space-constrained designs.
  • Robust Avalanche Energy Rating: Provides enhanced protection against voltage spikes, increasing device longevity and system reliability.

AFT20S015GNR1 Advantages vs Typical Alternatives

This MOSFET offers a compelling balance of low on-resistance and high current capacity compared to typical alternatives. Its reduced gate charge improves switching efficiency, lowering power dissipation and thermal management requirements. The wide temperature range and avalanche robustness contribute to superior reliability in industrial and automotive environments. Additionally, the compact SO-8 package enhances integration flexibility, making it a preferred choice for engineers seeking performance and durability in power switching applications.

Typical Applications

  • DC-DC converters for industrial power management, where efficient switching and thermal performance are critical for system stability and energy savings.
  • Battery management systems requiring reliable MOSFETs to handle high currents and rapid switching cycles.
  • Automotive electronics, including motor control and power distribution modules, benefiting from the device??s wide temperature tolerance and robustness.
  • General-purpose power switching in consumer and industrial equipment that demands low conduction losses and compact footprint.

AFT20S015GNR1 Brand Info

The AFT20S015GNR1 is produced by a leading semiconductor manufacturer known for delivering high-quality power MOSFETs tailored to demanding industrial and automotive sectors. This brand focuses on innovation and reliability, ensuring components meet stringent performance standards. The product line emphasizes low on-resistance, fast switching, and robust thermal management, aligning with modern power electronics requirements. The SO-8 packaging reflects the commitment to compact, efficient designs suitable for diverse applications.

FAQ

What is the maximum drain-source voltage rating of this MOSFET?

The device supports a maximum drain-source voltage of 20V, making it suitable for low-voltage power switching applications where this voltage rating is sufficient to handle the system requirements safely.

How does the on-resistance affect the performance of this MOSFET?

A low on-resistance reduces conduction losses during operation, improving efficiency and minimizing heat generation. This characteristic is critical for maintaining thermal stability and enhancing the overall reliability of power circuits.

What package type does this MOSFET come in, and why is it important?

This MOSFET is housed in an SO-8 package, which offers a compact footprint suitable for high-density PCB designs. The package also facilitates effective thermal dissipation and ease of assembly in automated manufacturing processes.

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Can this MOSFET operate in harsh temperature environments?

Yes, it is rated for operation from -55??C up to +150??C junction temperature, ensuring reliable performance in industrial and automotive environments exposed to wide temperature variations.

What applications are ideal for this MOSFET?

The device is ideal for DC-DC converters, battery management, automotive motor control, and general-purpose power switching. Its performance characteristics meet the demands of systems requiring efficient, reliable power management across various industries.

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