DDTC114WE-7-F Overview
The DDTC114WE-7-F is a high-performance dual NPN transistor device designed for industrial and consumer electronics applications. Engineered to deliver reliable switching and amplification with low noise and high gain, it is optimized for low voltage and low power usage. This transistor offers a compact SOT-23W package, facilitating easy integration into space-constrained PCB layouts. With robust electrical characteristics and excellent thermal stability, the component ensures dependable operation in demanding environments. Sourcing specialists and design engineers will appreciate its consistency and quality, making it suitable for a wide range of signal processing and switching tasks. Learn more at IC Manufacturer.
DDTC114WE-7-F Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Transistor Type | Dual NPN | |
| Collector-Emitter Voltage (VCEO) | 40 | V |
| Collector-Base Voltage (VCBO) | 60 | V |
| Emitter-Base Voltage (VEBO) | 5 | V |
| Collector Current (IC) | 150 | mA |
| Power Dissipation (Ptot) | 300 | mW |
| Current Gain (hFE) | 100 – 300 | |
| Transition Frequency (fT) | 100 | MHz |
| Package Type | SOT-23W |
DDTC114WE-7-F Key Features
- Dual NPN transistor configuration: Enables compact design by integrating two transistors in a single package, reducing board space and simplifying circuit layouts.
- High current gain (hFE): Provides efficient signal amplification, improving performance in low-power switching and amplification applications.
- Low collector-emitter saturation voltage: Enhances energy efficiency by minimizing power loss during switching operations.
- Wide voltage ratings: Supports up to 40 V collector-emitter voltage and 60 V collector-base voltage, ensuring robust operation in various voltage environments.
- Compact SOT-23W package: Facilitates integration in densely populated circuit boards with excellent thermal performance and ease of automated assembly.
- High transition frequency (100 MHz): Suitable for high-speed switching and RF applications requiring fast response times.
- Reliable power dissipation of 300 mW: Supports stable operation under moderate power loads without thermal stress.
DDTC114WE-7-F Advantages vs Typical Alternatives
This device offers a superior balance of voltage tolerance, gain, and switching speed compared to typical discrete transistor options. Its dual configuration in a single SOT-23W package reduces PCB area and simplifies assembly, while the high current gain ensures efficient signal amplification with minimal power consumption. The combination of wide voltage ratings and stable power dissipation enhances reliability in industrial applications, making it preferable for engineers seeking compact, high-performance transistor solutions.
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Typical Applications
- Signal amplification in low-power audio and sensor circuits, providing stable gain with minimal distortion and noise interference in industrial and consumer devices.
- Switching elements in logic-level control circuits, enabling efficient on/off control with low voltage drop and fast switching times.
- Driver stages for relay and LED indicators, ensuring reliable operation with low power loss and enhanced thermal stability.
- High-frequency small-signal amplification in RF circuits, leveraging the device??s 100 MHz transition frequency for improved signal integrity.
DDTC114WE-7-F Brand Info
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