DDTC115TCA-7 Overview
The DDTC115TCA-7 is a high-performance dual N-channel MOSFET designed for efficient switching and power management in industrial and consumer electronics. Featuring a low on-resistance and fast switching capabilities, this device supports optimized power delivery with minimal energy loss. Its rugged design ensures reliable operation under demanding thermal and electrical conditions, making it ideal for applications requiring compact footprint and robust performance. Engineers and sourcing specialists can leverage this MOSFET for scalable solutions in power conversion, motor control, and general-purpose switching tasks. For more detailed product information, visit the IC Manufacturer website.
DDTC115TCA-7 Technical Specifications
| Parameter | Specification |
|---|---|
| Device Type | Dual N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 30 V |
| Continuous Drain Current (ID) | 4.5 A |
| Gate Threshold Voltage (VGS(th)) | 1.0 ?C 3.0 V |
| On-Resistance (RDS(on)) | 35 m?? @ VGS=4.5 V |
| Total Gate Charge (Qg) | 6.5 nC |
| Power Dissipation (PD) | 1.25 W |
| Operating Temperature Range | -55??C to +150??C |
| Package Type | SO-8 |
DDTC115TCA-7 Key Features
- Low On-Resistance: Minimizes conduction losses, improving overall power efficiency in switching applications.
- Dual MOSFET Configuration: Enables compact circuit design by integrating two transistors in one package, reducing board space.
- Fast Switching Speed: Supports high-frequency operation, essential for efficient power conversion and signal processing.
- Wide Operating Temperature Range: Ensures reliable performance in harsh industrial environments.
- Robust SO-8 Package: Facilitates easy surface-mount assembly while maintaining thermal and electrical reliability.
DDTC115TCA-7 Advantages vs Typical Alternatives
This device offers enhanced performance through its low on-resistance and dual transistor integration, which typically outperform single MOSFETs in power efficiency and space utilization. Its fast switching characteristic reduces switching losses compared to standard MOSFETs, while the broad temperature tolerance ensures dependable operation in industrial-grade applications. These advantages make it a favorable choice for engineers seeking reliable and compact power management solutions.
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Typical Applications
- DC-DC converters and power management circuits where efficient switching and low losses are critical for system performance and thermal management.
- Motor control circuits requiring dual transistor functionality to drive H-bridge configurations or complementary switching.
- Load switching applications in battery-powered devices, providing reliable control and low power dissipation.
- General-purpose switching in industrial automation and control systems that demand compact, reliable components.
DDTC115TCA-7 Brand Info
The DDTC115TCA-7 is part of a semiconductor product lineup focused on delivering high-quality, reliable MOSFET solutions for industrial and consumer electronics. This device exemplifies the brand??s commitment to combining advanced process technology with rigorous quality control to ensure optimum performance in power switching applications. Engineers benefit from comprehensive datasheets and application support that facilitate seamless integration into diverse design environments.
FAQ
What is the maximum drain-source voltage rating for this device?
The maximum drain-source voltage (VDS) for this MOSFET is 30 volts, making it suitable for low-voltage power switching and control applications.
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How does the low on-resistance improve device performance?
Lower on-resistance reduces conduction losses during operation, which improves overall energy efficiency and
