RTE44012 Overview
The RTE44012 is a high-performance semiconductor device designed for efficient power management and control in industrial and commercial electronics. This integrated solution offers robust switching capabilities with optimized electrical characteristics, ensuring low power loss and enhanced system reliability. Its compact form factor and precise operational parameters make it ideal for applications demanding stable and efficient energy conversion. Engineers and sourcing specialists will find this device particularly valuable for advanced power supply designs and embedded control circuits. For detailed product specifications and purchasing options, visit IC Manufacturer.
RTE44012 Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Maximum Drain-Source Voltage (VDS) | 30 | V |
| Continuous Drain Current (ID) | 6.0 | A |
| Gate Threshold Voltage (VGS(th)) | 1.0 – 2.5 | V |
| On-Resistance (RDS(on)) | 8.5 | m?? |
| Gate Charge (Qg) | 8.0 | nC |
| Input Capacitance (Ciss) | 725 | pF |
| Power Dissipation (PD) | 1.3 | W |
| Operating Temperature Range (Tj) | -55 to 150 | ??C |
RTE44012 Key Features
- Low On-Resistance: The device features a minimal RDS(on) of 8.5 m??, significantly reducing conduction losses and improving overall efficiency in power circuits.
- High Current Capability: Supports continuous drain currents up to 6 A, enabling reliable operation in demanding load conditions typical of industrial applications.
- Fast Switching Performance: With a gate charge of only 8.0 nC, this product facilitates rapid switching, which minimizes switching losses and enhances system response times.
- Wide Temperature Range: Designed to operate safely between -55??C and 150??C, ensuring stable performance in harsh environments and varied industrial settings.
RTE44012 Advantages vs Typical Alternatives
This device offers superior efficiency through its low on-resistance and fast switching features, which reduce power dissipation compared to typical alternatives. Its high current handling and broad temperature tolerance make it more reliable in industrial environments where durability and stable performance are critical. The compact integration also aids in space-saving designs without sacrificing electrical robustness.
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Typical Applications
- Switching power supplies and DC-DC converters requiring efficient high-current switching with minimal thermal losses and precise control.
- Motor control circuits in automation systems where fast switching and high reliability are essential for performance and longevity.
- Battery management and power distribution modules demanding stable operation across wide temperature ranges and load conditions.
- Industrial lighting control and electronic ballast circuits benefiting from low gate charge and fast switching speeds.
RTE44012 Brand Info
This device is part of a proven semiconductor portfolio offering by a reputable manufacturer known for delivering high-quality power MOSFETs tailored for industrial applications. The product is engineered to meet rigorous standards of performance, reliability, and efficiency, ensuring seamless integration into advanced electronic systems. It leverages advanced fabrication technology to provide consistent electrical characteristics and robust operational stability for demanding industrial and commercial environments.
FAQ
What is the maximum voltage rating of this device?
The device is rated for a maximum drain-source voltage of 30 V, making it suitable for low to medium voltage power management applications.
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How does the low on-resistance benefit circuit performance?
Lower on-resistance reduces conduction losses during operation, which