JAN2N3636UB-Transistor by JAN – High-Power NPN Transistor, TO-220 Package

JAN2N3636UB-Transistor Overview

The JAN2N3636UB transistor is a high-performance bipolar junction transistor designed for robust switching and amplification tasks in demanding industrial environments. Featuring a durable construction and reliable electrical characteristics, it supports efficient current handling with low saturation voltage, making it ideal for power management applications. Its junction avalanche rating and guaranteed gain ensure stable operation under varying load conditions. This transistor is well-suited for engineers and sourcing specialists seeking a dependable semiconductor solution for analog or switching circuits. For detailed technical support and sourcing, visit the IC Üreticisi web sitesi.

JAN2N3636UB-Transistor Key Features

• High Collector-Emitter Voltage (Vceo): The transistor supports up to 100 V, enabling operation in high-voltage circuits without breakdown risk.
• Collector Current Capacity: Capable of handling continuous collector currents up to 10 A, allowing effective power switching and amplification.
• Low Saturation Voltage: Ensures minimal power loss during conduction, improving overall circuit efficiency.
• High Gain Bandwidth Product: Provides reliable gain stability across frequencies, beneficial for analog amplification applications.
• Junction Avalanche Rating: Offers ruggedness against voltage spikes, increasing device reliability in transient conditions.
• Complementary Device Compatibility: Designed to work seamlessly with complementary transistors in push-pull and class AB amplifier configurations.
• Robust Package Design: The transistor’s encapsulation ensures effective heat dissipation and mechanical stability.

JAN2N3636UB-Transistor Technical Specifications

JAN2N3636UB-Transistor Advantages vs Typical Alternatives

This transistor offers superior voltage and current ratings compared to typical alternatives, enabling it to handle higher power loads with increased reliability. Its low saturation voltage reduces conduction losses, enhancing efficiency in power circuits. The rugged avalanche rating protects against voltage transients, ensuring stable operation in industrial settings. These characteristics make it a preferred choice for applications demanding durability, precise gain, and effective thermal management.

Tipik Uygulamalar

• Power Amplification: Ideal for audio and RF power amplifiers where consistent gain and high current handling are critical for signal integrity and output power.
• Switching Regulators: Used in DC-DC converters and switching power supplies requiring efficient high-voltage and high-current switching performance.
• Motor Control Circuits: Suitable for driving motors in industrial automation systems, benefiting from its robustness and current capacity.
• General Purpose Amplification: Effective in linear amplifier stages or signal processing circuits demanding reliable semiconductor components.

JAN2N3636UB-Transistor Brand Info

The JAN2N3636UB transistor is part of a trusted series of high-reliability bipolar junction transistors produced by established manufacturers specializing in military and industrial-grade semiconductors. The JAN prefix denotes compliance with Joint Army-Navy specifications, ensuring rigorous quality control and consistency. This product is engineered for long-term performance in harsh conditions, reflecting the brand??s commitment to delivering robust components for professional electronic designs.

SSS

What is the maximum collector current rating for this transistor?

The transistor supports a maximum continuous collector current of 10 A, enabling it to handle substantial loads in power amplification and switching applications without overheating or damage.

Can this transistor operate at high voltages?

Yes, it is rated for a maximum collector-emitter voltage of 100 V and a collector-base voltage of 140 V, making it suitable for high-voltage industrial and power circuits.

How does the transistor??s gain affect its performance?

This device guarantees a minimum DC current gain of 30 at 4 A collector current, ensuring stable amplification and efficient switching performance in various circuit configurations.

Is the JAN2N3636UB suitable for high-frequency applications?

With a transition frequency of at least 3 MHz, the transistor supports moderate-frequency operation, making it suitable for many analog and switching applications but not optimized for very high-frequency RF use.

What measures enhance the transistor??s reliability in industrial environments?

The transistor??s rugged junction avalanche rating, high maximum junction temperature of 200??C, and robust packaging design collectively contribute to its durability and reliable operation under transient voltage conditions and thermal stress.