2N5794U-Dual-Transistor Overview
The 2N5794U dual transistor device offers a compact, reliable solution for applications requiring matched transistor pairs in a single package. Designed with high gain and low noise characteristics, it is ideal for amplification and switching circuits where signal integrity and precise performance are essential. This dual transistor integrates two complementary transistors on a common substrate, simplifying circuit design and reducing board space. Its robust electrical parameters ensure consistent operation across temperature ranges, making it suitable for industrial and commercial electronics. For sourcing and technical data, visit 集成电路制造商.
2N5794U-Dual-Transistor Technical Specifications
| 参数 | 规格 |
|---|---|
| 晶体管类型 | NPN Dual Transistor |
| 集电极-发射极电压（V首席执行官) | 30 V |
| 集电极电流（IC) | 100 毫安 |
| 功率耗散（P总计) | 300 毫瓦 |
| 直流电流增益 (hFE) | 100 至 300 |
| 转换频率（fT) | 100 兆赫（典型值） |
| 噪声系数 | Low noise operation |
| 包装类型 | TO-18 金属罐 |
| 工作温度范围 | -55??C to +125??C |
2N5794U-Dual-Transistor Key Features
- Matched Pair Configuration: Incorporates two closely matched NPN transistors in one package, enhancing differential amplifier performance with improved symmetry and reduced drift.
- High Current Gain: Provides a stable DC gain between 100 and 300, ensuring efficient amplification and signal processing in low-level input circuits.
- Low Noise Characteristics: Designed for low noise operation, making it suitable for precision analog circuits and sensitive sensor interfaces.
- Compact TO-18 Package: Offers robust mechanical protection while minimizing board footprint, facilitating integration into dense circuit layouts.
典型应用
- Precision amplifier circuits requiring matched transistor pairs for differential inputs, such as operational amplifier input stages or instrumentation amplifiers.
- Switching circuits in control systems where reliable transistor pairing improves timing and reduces offset errors.
- Low-noise preamplifier stages in audio and sensor signal conditioning, benefiting from the device??s low noise and high gain.
- Temperature-compensated circuits requiring stable transistor characteristics over a wide operating temperature range.
2N5794U-Dual-Transistor Advantages vs Typical Alternatives
This dual transistor device offers superior matching of transistor parameters compared to discrete alternatives, reducing the need for external balancing components. Its low noise and high gain characteristics provide enhanced signal integrity, critical for precision analog designs. The compact TO-18 package ensures robust protection and easy integration, while the wide operating temperature range assures reliability in harsh industrial environments. These features collectively improve circuit performance, reduce design complexity, and enhance overall system stability.
🔥 畅销产品
2N5794U-Dual-Transistor Brand Info
The 2N5794U dual transistor is a product historically manufactured by several semiconductor companies specializing in discrete transistor devices, including RCA and ON Semiconductor. This device is part of a family of matched transistor pairs widely used in industrial and commercial electronics. It continues to be recognized for its reliability and consistent performance in analog and switching applications. Availability may be through authorized distributors and legacy stock from reputable IC manufacturers, ensuring engineers access to proven components for legacy and new designs.
常见问题
What type of transistor is included in the 2N5794U dual transistor device?
The device contains two matched NPN transistors integrated within a single package. These transistors are designed to work together, providing consistent electrical characteristics ideal for differential amplification and matched-pair applications.
🌟 特色产品
What is the maximum collector current rating for this dual transistor?
The maximum collector current for each transistor within the device is rated at 100 milliamps. This current rating supports moderate power applications, suitable for signal-level amplification and switching.
How does the packaging influence the device??s performance and integration?
The 2N5794U is housed in a TO-18 metal can
