2N2369AUA/TR NPN Transistor by ON Semiconductor – TO-18 Metal Can Package

  • This transistor amplifies low-level signals, enhancing circuit performance in various electronic designs.
  • A high frequency response supports fast switching, crucial for efficient signal processing applications.
  • The compact package reduces board space, allowing for denser and more efficient circuit layouts.
  • Commonly used in audio and RF circuits, 2N2369AUA/TR improves signal clarity and overall device function.
  • Manufactured to meet industry standards, it ensures consistent operation and long-term reliability in devices.
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产品上方询盘

2N2369AUA/TR Overview

The 2N2369AUA/TR is a high-speed NPN bipolar junction transistor designed for reliable switching and amplification in industrial and consumer electronics. Featuring a fast transition frequency and low collector capacitance, it supports efficient high-frequency operation up to 100 MHz. This transistor is optimized for linear and switching applications, making it suitable for signal processing, amplification, and switching circuits. Supplied in a robust TO-18 metal can package, it ensures thermal stability and long-term reliability. Available through Fabricante de CI, this device is ideal for engineers seeking durable, high-performance transistors in demanding environments.

2N2369AUA/TR Key Features

  • High transition frequency: Enables fast switching and amplification up to 100 MHz, supporting high-speed circuit designs.
  • Low collector-base capacitance: Minimizes signal distortion, enhancing performance in RF and analog signal applications.
  • Robust TO-18 metal can package: Provides excellent thermal dissipation and mechanical protection for improved reliability.
  • Producto de ancho de banda de alta ganancia: Supports effective amplification with consistent performance across frequency ranges.

2N2369AUA/TR Technical Specifications

ParámetroEspecificación
TipoTransistor de unión bipolar NPN
Frecuencia de transición (fT)100 MHz (típico)
Tensión colector-base (VCBO)30 V
Tensión colector-emisor (VCEO)30 V
Tensión emisor-base (VEBO)5 V
Corriente de colector (IC)100 mA (max)
Disipación de potencia (Ptot)625 mW
Gain Bandwidth Product (fT x hFE)Minimum 100 MHz
PaqueteTO-18 metal can

2N2369AUA/TR Advantages vs Typical Alternatives

This transistor offers superior high-frequency response and thermal stability compared to typical general-purpose transistors. Its low capacitance and high transition frequency enable more precise signal switching and amplification, reducing distortion and power loss. The robust metal can package enhances durability in harsh environments, ensuring consistent performance and longer operational life, which benefits engineers requiring reliable solutions in high-speed and industrial applications.

Aplicaciones típicas

  • High-speed switching circuits where fast transistor response and minimal signal delay are critical, such as digital logic interfaces and pulse generators.
  • Small-signal amplification in audio and RF circuits requiring stable gain and low noise levels.
  • Driver stages for relay and LED circuits, offering efficient current control with low power dissipation.
  • Test and measurement equipment, leveraging the device??s linearity and frequency response for accurate signal processing.

2N2369AUA/TR Brand Info

Produced by a trusted semiconductor manufacturer, the 2N2369AUA/TR continues the legacy of the renowned 2N2369 series, known for its reliability and performance in industrial electronics. This iteration enhances speed and thermal performance while maintaining compatibility with standard industry packaging. The brand emphasizes quality manufacturing processes, ensuring each unit meets rigorous electrical and mechanical standards for professional applications.

PREGUNTAS FRECUENTES

What is the maximum collector current of this transistor?

The maximum collector current for this transistor is 100 mA. This rating ensures safe operation within typical small-signal and switching applications without risk of damage due to overcurrent conditions.

Can this transistor be used in RF applications?

Yes, due to its transition frequency of approximately 100 MHz and low collector-base capacitance, it is well suited for RF amplification and signal processing tasks within this frequency range.

What package type does this transistor come in, and why is it important?

This device is housed in a TO-18 metal can package, which offers superior thermal dissipation and mechanical protection compared to plastic packages, making it ideal for environments requiring enhanced reliability.

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产品中间询盘

How does the transistor??s gain bandwidth product benefit circuit design?

The gain bandwidth product indicates the frequency at which the transistor can provide amplification. A higher value, such as 100 MHz, allows for effective amplification of signals in both audio and RF frequency ranges, improving overall circuit performance.

Is this transistor compatible with standard transistor sockets and assembly methods?

Yes, the TO-18 package is a standard form factor widely supported by conventional transistor sockets and assembly techniques, facilitating easy integration into existing designs and manufacturing processes.

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