AEDR-9930E-100 Overview
The AEDR-9930E-100 is a high-performance phototransistor designed for efficient optical detection in industrial and electronic applications. Featuring a compact 3-pin package, it offers reliable photoelectric sensing with a peak sensitivity wavelength around 940 nm, making it ideal for infrared detection tasks. This device provides a fast response time and low dark current, ensuring precise signal capture in demanding environments. Engineers and sourcing specialists can leverage this component for robust optical sensing solutions, backed by consistent quality and proven technology from Fabricante de CI.
AEDR-9930E-100 Technical Specifications
| Parámetro | Especificación |
|---|---|
| Tipo de envase | 3-pin Phototransistor |
| Peak Sensitivity Wavelength | 940 nm |
| Tensión colector-emisor (VDIRECTOR GENERAL) | 30 V (max) |
| Emitter-Collector Voltage (VECO) | 5 V (max) |
| Corriente de colector (IC) | 50 mA (max) |
| Dark Current | Less than 100 nA at 5 V |
| Rise Time | 10 ??s (typical) |
| Fall Time | 10 ??s (typical) |
| Temperatura de funcionamiento | -25 ??C to +85 ??C |
| Temperatura de almacenamiento | -40 ??C to +100 ??C |
AEDR-9930E-100 Key Features
- High Sensitivity at 940 nm: Optimized spectral response enables accurate infrared detection, enhancing signal integrity in optical communication and sensing systems.
- Low Dark Current: Minimizes unwanted noise in low-light conditions, which improves detection accuracy and reliability in precision applications.
- Fast Switching Speeds: Rise and fall times of approximately 10 ??s facilitate rapid signal processing, critical for dynamic sensing environments requiring quick response.
- Amplio rango de temperaturas de funcionamiento: Ensures stable performance across industrial temperature variations, supporting deployment in harsh or variable conditions.
AEDR-9930E-100 Advantages vs Typical Alternatives
This phototransistor offers superior sensitivity and low noise compared to standard devices, improving signal accuracy in infrared detection tasks. Its fast response time outperforms many alternatives, enabling quicker data acquisition and processing. Additionally, the robust voltage ratings and broad temperature tolerance contribute to enhanced reliability and integration flexibility in diverse industrial environments.
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Aplicaciones típicas
- Infrared remote control receivers and optical communication systems requiring precise and fast infrared light detection for signal decoding and processing.
- Industrial automation sensors where reliable detection of infrared signals is critical for operational safety and efficiency.
- Position and proximity sensing in consumer electronics and machinery, utilizing the phototransistor??s fast response to detect object presence or movement.
- Optical encoders and feedback systems in robotics and motion control, leveraging the component??s accuracy and repeatability under varying environmental conditions.
AEDR-9930E-100 Brand Info
Manufactured under stringent quality controls, the AEDR-9930E-100 represents a trusted solution within the phototransistor product line from IC Manufacturer. Known for reliability and consistent optical performance, this device supports a wide range of industrial and commercial sensing applications. Its proven design and robust specifications reflect the brand??s commitment to delivering high-quality semiconductor components tailored to meet demanding engineering requirements.
PREGUNTAS FRECUENTES
What is the peak wavelength sensitivity of this phototransistor?
The phototransistor exhibits peak sensitivity at approximately 940 nm, making it highly effective for detecting infrared light signals commonly used in remote controls and optical communication systems.
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Can this device operate reliably in harsh temperature conditions?
Yes, the device supports an operating temperature range from -25 ??C to +85 ??C, ensuring stable performance in various industrial and environmental conditions without degradation in sensitivity or response time.
What are the typical rise and fall times of the AEDR-9930E-100?
Both rise and fall times are typically around 10 microseconds, enabling rapid switching and responsiveness suitable for applications that require fast optical signal detection and processing.
Contacto
How does the dark current affect performance, and what is its typical value?
The dark current is a measure of leakage current when no light is present; a low dark current reduces noise and improves accuracy. For this model, the dark current is less than 100 nA at 5 V, which contributes to higher signal-to-noise ratio in low-light scenarios.
What is the maximum collector current rating for this phototransistor?
The maximum collector current is specified at 50 mA, providing a safe operational limit for designing circuits that require consistent and reliable photoelectric conversion without damaging the component.
