CY7C1041GN30-10ZSXIT Overview
The CY7C1041GN30-10ZSXIT is a high-performance static RAM (SRAM) device designed for applications requiring fast access times and low power consumption. With a density of 4 megabits, this SRAM offers robust performance in a compact package. Ideal for embedded systems, telecommunications, and industrial applications, it ensures reliable data storage without the need for refresh cycles. Its advanced features promote easy integration into various electronic systems, making it a suitable choice for engineers and designers focusing on efficiency and performance. For further details, visit Fabricante de CI.
CY7C1041GN30-10ZSXIT Key Features
- High-Speed Access: Delivers access times of 10 ns, enabling rapid data retrieval for performance-critical applications.
- Bajo consumo: Operates at a typical power supply of 3.0V, making it energy-efficient and suitable for battery-operated devices.
- Easy Integration: Comes in a compact 44-pin SOIC package, facilitating straightforward integration into various circuit designs.
- Conservación de datos: Maintains data integrity with a retention voltage as low as 2.0V, ensuring reliable performance even in low power states.
CY7C1041GN30-10ZSXIT Technical Specifications
| Parámetro | Valor |
|---|---|
| Densidad de memoria | 4 Mbit |
| Tiempo de acceso | 10 ns |
| Voltage Supply | 3.0V ?? 0.3V |
| Tipo de envase | 44-Pin SOIC |
| Consumo de energía | Typical 15 mA (active) |
| Tensión de conservación de los datos | 2,0V (min) |
| Temperatura de funcionamiento | De -40 °C a +85 °C |
| Duración del ciclo de escritura | 10 ns |
CY7C1041GN30-10ZSXIT Advantages vs Typical Alternatives
This SRAM device stands out against typical alternatives due to its superior access time of 10 ns and lower operating voltage, which contribute to enhanced overall efficiency. Additionally, the compact SOIC package allows for easier integration into space-constrained designs, making it a preferred choice for high-performance applications.
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Aplicaciones típicas
- Embedded Systems: Utilized extensively in microcontrollers and DSPs, providing fast data access essential for real-time processing tasks.
- Telecommunications: Applied in network routers and switches, where rapid data retrieval and low latency are critical for communication speed.
- Industrial Control Systems: Serves in automation and control units, where reliable data storage and quick access are vital for operational efficiency.
- Electrónica de consumo: Integrated in devices like digital cameras and gaming consoles, ensuring smooth performance and user experience.
CY7C1041GN30-10ZSXIT Brand Info
The CY7C1041GN30-10ZSXIT is manufactured by Cypress Semiconductor, a leader in advanced memory solutions. Known for its innovative technology and commitment to quality, Cypress provides a wide range of semiconductor products that cater to diverse applications. The CY7C1041GN30-10ZSXIT exemplifies the company??s dedication to delivering high-performance, reliable memory solutions, ensuring that engineers and designers have access to the best tools for their projects.
PREGUNTAS FRECUENTES
What is the typical access time for the CY7C1041GN30-10ZSXIT?
The typical access time for this SRAM device is 10 ns, which makes it suitable for applications requiring rapid data retrieval and processing.
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What are the voltage requirements for the CY7C1041GN30-10ZSXIT?
This SRAM operates at a voltage supply of 3.0V ?? 0.3V, with a minimum data retention voltage of 2.0V to ensure data integrity.
In what temperature range can the CY7C1041GN30-10ZSXIT operate?
The device is designed to function reliably within an operating temperature range of -40??C to +85??C, making it suitable for various environments.
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What package type does the CY7C1041GN30-10ZSXIT come in?
The product is available in a 44-pin SOIC package, which allows for easy integration into compact circuit designs.
How does the CY7C1041GN30-10ZSXIT compare to other SRAM options?
Compared to other SRAM options, this device offers a competitive access time of 10 ns and lower power consumption, enhancing its efficiency in high-performance applications.