DDTC114WE-7 Overview
The DDTC114WE-7 is a robust dual-channel transistor array designed for high-performance switching and amplification applications. Featuring matched NPN transistors with enhanced gain characteristics, this device delivers consistent operation in industrial control, signal processing, and power management systems. Its compact SOT-363 package supports efficient board space utilization, while optimized electrical parameters ensure reliable and precise performance. Engineered for durability and stability, the DDTC114WE-7 addresses the demands of modern electronics design with a focus on seamless integration and enhanced signal integrity. Learn more from the Fabricante de CI.
DDTC114WE-7 Technical Specifications
| Parámetro | Especificación |
|---|---|
| Tipo de transistor | Dual NPN Bipolar Junction Transistors |
| Tensión colector-emisor (VDIRECTOR GENERAL) | 40 V |
| Corriente de colector (IC) | 100 mA |
| Producto de ganancia de ancho de banda (fT) | 100 MHz |
| Ganancia de corriente continua (hFE) | 100 a 300 (típico) |
| Tipo de envase | SOT-363 (6-lead) |
| Temperatura de funcionamiento | De -55 °C a +150 °C |
| Disipación de potencia (Ptot) | 300 mW |
| Frecuencia de transición | 100 MHz |
DDTC114WE-7 Key Features
- Matched dual NPN transistors: Ensures consistent gain and switching characteristics, enabling precise analog signal processing.
- High gain bandwidth product (100 MHz): Supports high-speed switching and amplification in frequency-sensitive applications.
- Compact SOT-363 package: Facilitates space-saving PCB layouts without compromising thermal management or reliability.
- Amplio rango de temperaturas de funcionamiento (de -55 °C a +150 °C): Guarantees stable performance in harsh industrial environments.
- Low power dissipation (300 mW): Enhances energy efficiency and reduces thermal stress on circuits.
- Collector current up to 100 mA: Suitable for moderate power switching tasks in control systems.
DDTC114WE-7 Advantages vs Typical Alternatives
This transistor array offers superior integration by combining two matched NPN transistors in a single compact package, reducing board complexity and assembly costs. Its high gain bandwidth and stable operation across wide temperatures provide better signal fidelity and reliability compared to discrete transistor solutions. Low power dissipation further improves efficiency, making it a preferred choice for industrial and control applications requiring consistent switching performance.
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Aplicaciones típicas
- Signal amplification and switching in industrial automation systems, where precise transistor matching and thermal stability are critical for control accuracy.
- Driver stages for relay and lamp control circuits, benefiting from the device??s moderate current capacity and compact footprint.
- High-speed switching in communication interface circuits, leveraging the transistor??s wide bandwidth capabilities.
- General-purpose transistor array applications requiring reliable operation in temperature-variable environments.
DDTC114WE-7 Brand Info
The DDTC114WE-7 is part of a series of transistor arrays manufactured by a leading semiconductor company known for its commitment to quality and innovation in discrete components. This product line emphasizes enhanced electrical performance and robust packaging solutions tailored for industrial and commercial electronic designs. The brand offers comprehensive datasheets and technical support to assist engineers and sourcing specialists in selecting the right device for their application requirements.
PREGUNTAS FRECUENTES
What are the maximum voltage and current ratings for the DDTC114WE-7?
The device supports a maximum collector-emitter voltage of 40 V and a collector current up to 100 mA per transistor, making it suitable for a range of moderate power switching and amplification tasks in industrial electronics.
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Can the DDTC114WE-7 operate reliably in high-temperature environments?
Yes, it is qualified for an operating temperature range from -55??C to +150??C, ensuring reliable performance in harsh and variable industrial temperature conditions without degradation of electrical characteristics.
