JAN2N1480-Transistor NPN Amplifier Transistor in TO-18 Metal Can Package ?C Motorola

JAN2N1480-Transistor Overview

The JAN2N1480 transistor is a high-voltage NPN bipolar junction transistor (BJT) designed for reliable switching and amplification in demanding electronic circuits. It features a maximum collector-emitter voltage rating of 100 V and a collector current of up to 3 A, making it suitable for medium power applications. The device offers robust electrical characteristics with a DC current gain (hFE) ranging from 40 to 160, ensuring stable performance across various operating conditions. Its TO-18 metal can package provides excellent thermal dissipation and mechanical durability, ideal for industrial and military-grade applications. This transistor is a dependable choice for engineers seeking precision and ruggedness in switching and amplification tasks. Fabricante de CI

JAN2N1480-Transistor Technical Specifications

JAN2N1480-Transistor Key Features

• Tolerancia a la alta tensión: With a 100 V maximum collector-emitter voltage, it supports circuits requiring medium-voltage switching and amplification.
• Robust current handling: Capable of sustaining up to 3 A collector current, ensuring reliable performance in moderate power applications.
• Wide DC current gain range: Provides flexibility in circuit design with hFE between 40 and 160, facilitating stable amplification across conditions.
• Durable TO-18 package: The metal can package offers superior thermal dissipation and mechanical strength, enhancing reliability in harsh environments.

Aplicaciones típicas

• Used in industrial switching circuits requiring high voltage and moderate current control, such as relay drivers and power regulators.
• Suitable for audio amplification stages where stable gain and linearity are essential for signal integrity.
• Applied in low to medium power DC-DC converters, providing efficient switching capability with thermal resilience.
• Common in military and aerospace electronics due to its JAN (Joint Army-Navy) qualification and rugged package design.

JAN2N1480-Transistor Advantages vs Typical Alternatives

This transistor offers a distinctive combination of high voltage rating and moderate current capacity in a rugged TO-18 metal can package, which enhances thermal management and mechanical durability compared to plastic-encapsulated alternatives. Its wide DC gain range ensures design flexibility, while the JAN qualification signals compliance with stringent military standards, providing enhanced reliability and consistency in critical applications. These advantages make it a preferred choice where precision, power handling, and environmental resilience are required.

JAN2N1480-Transistor Brand Info

The JAN2N1480 transistor is part of the JAN series, originally standardized under military specifications (MIL-STD-19500), indicating its manufacture according to stringent quality and reliability standards. Typically produced by established semiconductor manufacturers that supply military and industrial-grade components, the JAN prefix denotes compliance with rigorous testing protocols, including temperature cycling and electrical stress screening. This device is favored in applications demanding long-term stability and high performance under challenging conditions.

PREGUNTAS FRECUENTES

What is the maximum collector current rating of the JAN2N1480 transistor?

The transistor supports a maximum collector current of 3 amperes, making it suitable for medium power switching and amplification tasks where stable current handling is essential.