JAN2N2484UB-Transistor Overview
The JAN2N2484UB is a robust high-voltage NPN bipolar junction transistor designed for demanding industrial and aerospace applications. Manufactured to military standards, this transistor offers reliable switching and amplification performance under harsh environmental conditions. Key attributes include a high collector-emitter voltage rating of 250V and a collector current capability of up to 10A, making it suitable for power control and amplification tasks. With its low saturation voltage and high gain, the device ensures efficient power handling and improved thermal stability. Available in a hermetically sealed TO-3 metal can package, this transistor guarantees durability and long-term operational stability. For detailed datasheets and purchasing options, visit Fabricante de CI.
JAN2N2484UB-Transistor Key Features
- High collector-emitter voltage (250V): enables reliable operation in high-voltage circuits, providing robust voltage handling capacity.
- Collector current up to 10A: supports high power applications, ensuring efficient current conduction without thermal runaway.
- Baja tensión de saturación: reduces power dissipation, improving overall circuit efficiency and thermal management.
- Hermetic TO-3 metal can package: offers excellent thermal conductivity and environmental protection for extended device life.
- Alta ganancia de corriente (hFE): ensures effective signal amplification and switching performance in analog and digital circuits.
- Military-grade quality: compliant with JAN standards, guaranteeing enhanced reliability and consistent performance in critical systems.
JAN2N2484UB-Transistor Technical Specifications
| Parámetro | Valor | Unidad |
|---|---|---|
| Tipo de transistor | NPN Bipolar Junction | ?C |
| Tensión colector-emisor (VDIRECTOR GENERAL) | 250 | V |
| Tensión colector-base (VCBO) | 400 | V |
| Emitter-Base Voltage (VEBO) | 7 | V |
| Corriente de colector (IC) | 10 | A |
| Disipación de potencia (PD) | 115 | W |
| Ganancia de corriente continua (hFE) | 40?C160 | ?C |
| Frecuencia de transición (fT) | 4 | MHz |
| Tipo de envase | TO-3 Metal Can | ?C |
| Temperatura de funcionamiento | -65 a +200 | ??C |
JAN2N2484UB-Transistor Advantages vs Typical Alternatives
This transistor delivers superior high-voltage and high-current capabilities compared to many standard BJTs, ensuring enhanced reliability in power-intensive industrial and military circuits. Its hermetically sealed TO-3 package improves thermal dissipation and environmental resistance, reducing failure rates under stress. The device??s low saturation voltage improves energy efficiency, while its high gain supports precise amplification and switching. These benefits make it a preferred choice when durability, performance, and long-term stability are critical.
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Aplicaciones típicas
- Power amplification stages in aerospace and military communication equipment, where high voltage and current handling are essential for signal integrity and reliability.
- Switching regulators and power control circuits requiring robust transistor performance and thermal stability.
- Industrial motor control systems benefiting from the device??s high current capacity and rugged packaging.
- High-voltage DC-DC converters and inverters used in harsh environments due to the transistor??s wide operating temperature range and packaging protection.
JAN2N2484UB-Transistor Brand Info
The JAN2N2484UB transistor is a military-grade semiconductor device produced under stringent quality control standards to meet the demanding requirements of defense and aerospace sectors. The JAN prefix denotes compliance with Joint Army-Navy specifications, indicating rigorous testing for temperature extremes, mechanical shock, and electrical performance. This transistor is part of a product family renowned for reliability and precision, intended for engineers and system designers requiring trustworthy components in mission-critical applications.
PREGUNTAS FRECUENTES
¿Cuál es la corriente de colector máxima de este transistor?
The maximum collector current rating is 10 amperes, allowing it to handle high current loads in power amplification and switching applications safely without degradation.
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¿Qué tipo de encapsulado utiliza este transistor y por qué es importante?
This transistor is housed in a hermetically sealed TO-3 metal can package, which provides excellent thermal conductivity and environmental protection, ensuring reliable operation in harsh conditions and improving heat dissipation.
What voltage levels can the transistor withstand between collector and emitter?
It can withstand up to 250 volts between the collector and emitter terminals, making it suitable for high-voltage circuits in industrial and military applications.
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How does this transistor perform in terms of current gain?
The device offers a DC current gain (hFE) ranging from 40 to 160, which provides efficient amplification and switching capabilities in various circuit designs.
Is this transistor suitable for high-temperature environments?
Yes, it operates reliably over a wide temperature range from -65??C to +200??C, making it ideal for extreme environmental conditions encountered in aerospace and industrial applications.
