The 2N1479 is a silicon NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It features robust electrical characteristics suitable for medium-power operations in analog and digital circuits. This transistor provides reliable performance with a maximum collector current rating that supports a variety of industrial and commercial electronic designs. Its complementary configuration and consistent gain characteristics make it a versatile component for signal amplification and switching roles. Engineers and sourcing specialists can rely on this device for stable operation across a wide range of temperatures and voltages, ensuring dependable circuit performance. For detailed procurement and technical support, visit Fabricant de circuits intégrés.
2N1479-Transistor Technical Specifications
Paramètres
Spécifications
Type
NPN Bipolar Junction Transistor
Tension collecteur-émetteur (VPDG)
40 V
Tension collecteur-base (VCBO)
60 V
Tension de base de l'émetteur (VEBO)
5 V
Courant de collecteur (IC)
150 mA
Dissipation de puissance (Ptot)
400 mW
Gain en courant continu (hFE)
50 to 300 (depending on operating conditions)
Fréquence de transition (fT)
100 MHz (typical)
Type d'emballage
TO-18 Metal Can
2N1479-Transistor Key Features
Reliable Medium-Power Handling: Supports collector currents up to 150 mA, enabling stable performance in moderate power amplification and switching circuits.
High Voltage Tolerance: With a collector-base voltage rating of 60 V, it suits applications requiring voltage margins for safe operation under transient conditions.
Wide Gain Range: DC current gain between 50 and 300 allows flexible design choices for varying amplification needs.
High Transition Frequency: Operating typically at 100 MHz, the transistor is suitable for high-frequency applications, improving signal fidelity in RF and communication circuits.
Robust TO-18 Package: The metal can package provides excellent heat dissipation and durability for harsh environmental conditions.
Applications typiques
Signal Amplification: Commonly used in audio and RF amplifier stages where medium power and reliable gain are essential for clear signal processing.
Switching Circuits: Suitable for switching loads in control systems and digital logic circuits requiring moderate current handling.
Driver Stages: Ideal for driving relays, LEDs, or subsequent transistor stages in multi-stage amplification designs.
Test and Measurement Equipment: Utilized in instrumentation circuits where stable gain and frequency response enable accurate signal conditioning and measurement.
2N1479-Transistor Advantages vs Typical Alternatives
Compared to typical small-signal transistors, this device offers a balanced combination of voltage tolerance and current capacity, ensuring reliable operation under moderately demanding conditions. Its wide gain range enhances circuit design flexibility, while the metal can package improves thermal management and long-term reliability. These advantages make it a preferred choice for engineers seeking dependable performance without the need for specialized high-power or ultra-high frequency transistors.
The 2N1479 transistor is a legacy semiconductor device originally introduced by manufacturers such as Texas Instruments and Philips. It is part of a family of general-purpose BJTs that have seen widespread adoption in industrial and commercial electronics for decades. The product is often available through authorized distributors and IC suppliers specializing in through-hole components. Its consistent availability and well-documented specifications make it a trusted solution for engineers requiring proven transistor technology in both prototyping and production environments.
