2N3501U4/TR Overview
The 2N3501U4/TR is a high-performance PNP bipolar junction transistor (BJT) designed for general purpose amplification and switching applications. Featuring robust electrical characteristics and a reliable TO-92 plastic package, this transistor supports medium power operations with a collector current rating suitable for a wide range of industrial and consumer electronics. Its complementary transistor configuration aids in efficient circuit design, making it a versatile component for signal amplification and switching tasks. Available in a tape and reel format, it facilitates automated assembly processes, enhancing manufacturing efficiency. For further details, visit Fabricant de circuits intégrés.
2N3501U4/TR Key Features
- Medium Power Handling: Supports collector currents up to 1A, enabling effective operation in moderate power circuits.
- High DC Current Gain: Offers a typical hFE of 40 to 250, providing strong amplification capabilities for signal processing tasks.
- Complementary Device Availability: Designed to complement NPN transistors such as the 2N3055, facilitating push-pull amplifier designs and balanced switching circuits.
- Reliable TO-92 Package: Ensures ease of handling and mounting, while maintaining consistent thermal performance in various environments.
2N3501U4/TR Technical Specifications
| Paramètres | Valeur | Description |
|---|---|---|
| Tension collecteur-émetteur (VPDG) | -60 V | Maximum voltage the transistor can withstand between collector and emitter terminals. |
| Tension collecteur-base (VCBO) | -60 V | Maximum voltage between collector and base without damage. |
| Tension de base de l'émetteur (VEBO) | -5 V | Maximum reverse voltage between emitter and base terminals. |
| Courant de collecteur (IC) | -1 A | Maximum continuous collector current capability. |
| Dissipation de puissance (Ptot) | 625 mW | Maximum power the transistor can dissipate safely. |
| Gain en courant continu (hFE) | 40 to 250 | Typical current amplification factor at specified test conditions. |
| Fréquence de transition (fT) | 100 MHz (typical) | Frequency at which current gain drops to unity, indicating switching speed. |
| Température de jonction opérationnelle (TJ) | +150??C | Maximum allowable junction temperature for reliable operation. |
2N3501U4/TR Advantages vs Typical Alternatives
This transistor offers a well-balanced combination of voltage rating, current handling, and gain, making it highly adaptable compared to standard PNP BJTs. Its moderate power dissipation and complementary design enhance circuit efficiency and reliability, especially in amplifier and switching applications. The TO-92 package ensures cost-effective integration while providing sufficient thermal stability, positioning this device as a practical alternative to more specialized or costly transistors.
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Applications typiques
- Signal amplification in audio and low-frequency circuits where medium power gain and reliable switching are essential.
- Complementary push-pull amplifier stages paired with NPN transistors for balanced output in power amplification.
- General-purpose switching in control circuits and industrial automation systems requiring robust transistor performance.
- Interface and driver circuits in consumer electronics, benefiting from the transistor??s stable electrical characteristics.
2N3501U4/TR Brand Info
The 2N3501U4/TR is a product offered by a reputable semiconductor manufacturer known for delivering reliable bipolar junction transistors suited for industrial and commercial applications. Packaged in the popular TO-92 format and supplied in tape and reel packaging, it targets automated assembly lines aiming for consistent device quality and performance. This transistor exemplifies the manufacturer??s commitment to combining proven device architectures with modern packaging standards for efficient production workflows.
FAQ
What is the maximum collector current rating of this transistor?
The maximum continuous collector current rating is -1 ampere, which allows the transistor to handle medium power levels suitable for general amplification and switching tasks.
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Can this transistor be used in push-pull amplifier configurations?
Yes, it is a complementary PNP transistor often paired with NPN devices such as the 2N3055, making it ideal for push-pull amplifier designs to achieve balanced signal output.
What package type does this transistor use, and why is it important?
This device is housed in a TO-92 plastic package, which provides easy mounting and handling, along with adequate thermal performance for its power dissipation rating.
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What are the maximum voltage limits for the transistor?
The collector-emitter and collector-base voltages are rated at -60 volts, while the emitter-base voltage is limited to -5 volts to prevent damage under normal operating conditions.
Is the 2N3501U4/TR suitable for automated assembly processes?
Yes, the device is supplied in tape and reel packaging, facilitating automated pick-and-place assembly and ensuring consistent device orientation and quality during manufacturing.
