ASM6-S3D0-ANQ0H Overview
The ASM6-S3D0-ANQ0H is a high-performance semiconductor device designed for advanced industrial and automotive applications. It offers robust operational stability across a wide temperature range and integrates precise sensing capabilities with low power consumption. Engineered to meet stringent quality and reliability standards, this device supports complex system requirements with excellent signal integrity. Its compact form factor and ease of integration make it ideal for engineers and sourcing specialists seeking efficient and durable solutions. For more detailed technical insights, please visit the Fabricant de circuits intégrés website.
ASM6-S3D0-ANQ0H Technical Specifications
| Paramètres | Spécifications |
|---|---|
| Tension de fonctionnement | 2,7 V à 3,6 V |
| Plage de température de fonctionnement | De -40°C à +125°C |
| Type de sortie | Digital PWM Output |
| Sensibilité | Up to 6 mV/G |
| Consommation de courant | Typically 2.5 mA |
| Supply Voltage Noise Immunity | ??10% |
| Type d'emballage | 3-pin SMD (Surface Mount Device) |
| Shock Resistance | Up to 10,000 g |
ASM6-S3D0-ANQ0H Key Features
- High Sensitivity Sensor Technology: Enables precise detection of acceleration changes, improving system accuracy in dynamic environments.
- Wide Operating Temperature Range: Ensures reliable performance in harsh industrial and automotive conditions, reducing failure rates.
- Faible consommation d'énergie : Supports energy-efficient designs, extending system battery life and reducing heat generation.
- Compact Surface-Mount Package: Facilitates easy integration into space-constrained PCB layouts, supporting modern miniaturized designs.
ASM6-S3D0-ANQ0H Advantages vs Typical Alternatives
This device offers superior sensitivity and a wider temperature tolerance compared to typical accelerometers in its class. Its low current consumption and rugged shock resistance provide enhanced reliability and energy efficiency. The digital PWM output simplifies signal processing and integration, making it a compelling choice for engineers seeking a balance of precision, durability, and ease of implementation.
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Applications typiques
- Industrial vibration monitoring systems requiring accurate acceleration detection and robust operation under extreme temperature and shock conditions.
- Automotive safety systems such as airbag deployment sensors where fast and reliable acceleration measurements are critical.
- Consumer electronics featuring motion detection, benefiting from compact packaging and low power consumption.
- Robotics and automation equipment where precise motion sensing enhances control and performance.
ASM6-S3D0-ANQ0H Brand Info
The ASM6-S3D0-ANQ0H is developed by a leading semiconductor manufacturer known for high-quality MEMS sensors and analog devices. This product line focuses on delivering robust, reliable components tailored for industrial and automotive sectors. The brand emphasizes innovation, manufacturing excellence, and rigorous testing processes to ensure each device meets demanding environmental and operational standards.
FAQ
What is the typical operating voltage range for this device?
The device operates reliably within a voltage range of 2.7 V to 3.6 V, ensuring compatibility with a wide variety of industrial and automotive power supplies.
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How does the device handle extreme temperature conditions?
It supports operation across a temperature span from -40??C up to +125??C, making it suitable for harsh environments without degradation in performance.
What type of output signal does the sensor provide?
The sensor outputs a digital Pulse Width Modulated (PWM) signal, allowing straightforward interface with microcontrollers and simplifying signal processing tasks.
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How resistant is the device to mechanical shock?
The ASM6-S3D0-ANQ0H can withstand shocks up to 10,000 g, ensuring durability and reliable function in demanding applications such as automotive crash sensing and industrial machinery monitoring.
What benefits does the low current consumption provide?
With typical current consumption around 2.5 mA, the device supports designs requiring energy efficiency, reducing overall power draw and thermal output, which is critical for battery-powered and high-density electronic systems.
