JAN2N3250AUB-Transistor NPN High-Power Amplifier Transistor TO-220 Package by ON Semiconductor

JAN2N3250AUB-Transistor Overview

The JAN2N3250AUB is a high-performance NPN bipolar junction transistor designed for medium power switching and amplification applications. This transistor features a robust construction suitable for military and industrial environments, ensuring reliable operation under demanding conditions. With a maximum collector current rating supporting significant load handling, it excels in circuits requiring stable gain and fast switching capabilities. Its complementary parameters such as voltage ratings and gain bandwidth product make it ideal for precision analog and digital electronics. Available through Fabricant de circuits intégrés, this transistor meets stringent quality standards for long-term reliability and consistent performance.

JAN2N3250AUB-Transistor Technical Specifications

JAN2N3250AUB-Transistor Key Features

• Capacité de courant de collecteur élevée : Supports up to 10 A collector current, enabling robust power switching and amplification in demanding circuits.
• High Voltage Ratings: Collector-emitter voltage rating of 100 V and collector-base voltage of 120 V provide strong insulation and safety margins for high-voltage applications.
• Wide Gain Range: DC current gain ranging from 40 to 160 allows flexible design choices for varying amplification needs and operational stability.
• Elevated Power Dissipation: With a power dissipation capacity of 150 W, it withstands substantial thermal loads, enhancing reliability in continuous operation.

Applications typiques

• Power Amplifiers: Suitable for audio and RF amplification where high gain and power handling are critical, ensuring clear signal amplification with minimal distortion.
• Switching Regulators: Can be used in DC-DC converters and power supply circuits that require efficient switching performance and reliability under high current.
• Motor Control Circuits: Ideal for driving medium-power motors in industrial automation due to its ability to handle high currents and voltages.
• General-Purpose Amplification: Applicable in analog circuits requiring medium power amplification with stable gain and thermal robustness.

JAN2N3250AUB-Transistor Advantages vs Typical Alternatives

This transistor offers a balanced combination of high voltage tolerance, current capacity, and power dissipation that surpass many typical alternatives in similar classes. Its wide gain range and high transition frequency ensure stable operation across diverse signal environments. Enhanced thermal limits provide improved reliability in continuous or harsh operating conditions, making it a superior choice for high-reliability industrial and military electronics.

JAN2N3250AUB-Transistor Brand Info

The JAN2N3250AUB is part of the JAN (Joint Army-Navy) series, originally developed and qualified to military standards. These transistors are manufactured under rigorous quality control to meet MIL-STD-750 requirements, ensuring exceptional reliability and performance in critical applications. The JAN prefix identifies compliance with strict environmental and performance criteria, making it a preferred choice for aerospace, defense, and industrial sectors that demand durable semiconductor devices. This product is typically sourced from established semiconductor manufacturers specializing in military-grade discrete components.

FAQ

What is the maximum collector current rating of this transistor?

The transistor can handle a maximum collector current of 10 amperes, allowing it to manage medium power loads effectively in switching and amplification applications.

Can this transistor be used in high-temperature environments?

Yes, it supports a maximum junction temperature of up to