UMD12NS-TPQ2 Diode Rectifier Bridge Module | Mitsubishi Electric | Surface Mount

  • UMD12NS-TPQ2 is designed for efficient power management, enabling stable voltage regulation in electronic circuits.
  • Operating frequency supports optimized switching performance, which improves overall system efficiency and reduces heat.
  • The compact package minimizes board space requirements, allowing easier integration into dense PCB layouts.
  • Ideal for use in industrial automation systems where consistent power delivery enhances device reliability and uptime.
  • Manufactured to meet stringent quality standards, ensuring long-term durability under varying environmental conditions.
SKU : UMD12NS-TPQ2 Catégorie :
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UMD12NS-TPQ2 Overview

The UMD12NS-TPQ2 is a high-performance N-channel MOSFET designed for efficient power switching in industrial applications. It features a low on-resistance and fast switching capabilities, enabling reduced conduction losses and improved thermal management. This transistor is optimized for use in power management circuits, motor drivers, and DC-DC converters. Its robust package supports enhanced reliability and ease of integration into compact electronic designs. Engineers and sourcing specialists will find this device a reliable choice for high-efficiency power control solutions. For detailed technical data, visit the Fabricant de circuits intégrés.

UMD12NS-TPQ2 Technical Specifications

ParamètresValeur
TypeN-Channel MOSFET
Drain-Source Voltage (VDS)30 V
Continuous Drain Current (ID)12 A
Gate Threshold Voltage (VGS(th))1.0 ?C 2.5 V
On-Resistance (RDS(on))12 m?? @ VGS = 4.5 V
Gate Charge (Qg)10 nC (typical)
Total Gate-Drain Charge (Qgd)3 nC (typical)
Dissipation de puissance (PD)40 W
Type d'emballageTO-252 (DPAK)
Plage de température de fonctionnementDe -55 ??C à +150 ??C

UMD12NS-TPQ2 Key Features

  • Faible résistance à l'allumage : Minimizes conduction losses, enhancing overall efficiency in power switching applications.
  • High Continuous Current Rating: Supports up to 12 A drain current, suitable for demanding load conditions without compromising reliability.
  • Vitesse de commutation rapide : Reduced gate charge enables rapid transitions, improving system responsiveness and reducing switching losses.
  • Performance thermique robuste : The TO-252 package ensures efficient heat dissipation, maintaining device stability under high-power operation.

Applications typiques

  • Power Management Circuits: Ideal for DC-DC converters and voltage regulators requiring efficient power switching and thermal reliability.
  • Motor Control: Enables precise control of motor speed and torque in industrial automation and robotics systems.
  • Load Switches: Suitable for high-current load switching in battery-powered and backup power systems.
  • Lighting Systems: Supports LED driver circuits with high efficiency and low heat generation.

UMD12NS-TPQ2 Advantages vs Typical Alternatives

This MOSFET offers a competitive edge through its low on-resistance and high current capability, resulting in enhanced efficiency and reduced power loss compared to typical alternatives. The compact TO-252 package allows for improved thermal management and easier PCB integration. Its fast switching characteristics help decrease electromagnetic interference while maintaining system reliability in demanding industrial environments.

UMD12NS-TPQ2 Brand Info

The UMD12NS-TPQ2 is manufactured by Unisonic Technologies, a globally recognized semiconductor supplier known for delivering reliable and cost-effective discrete devices. This product line focuses on power MOSFETs designed to meet the stringent requirements of industrial and automotive applications. Unisonic Technologies ensures high-quality standards through rigorous testing and advanced manufacturing processes, making this MOSFET a trusted component for engineers seeking durable and efficient power solutions.

FAQ

What is the maximum drain-source voltage rating for this MOSFET?

The maximum drain-source voltage (VDS) for this MOSFET is 30 volts, which defines the highest voltage the device can safely block when turned off.

Ce transistor peut-il supporter des charges continues de courant élevé ?

Yes, it supports a continuous drain current of up to 12 amperes, making it suitable for applications with significant current demands without overheating or performance degradation.

What package type does this MOSFET use, and why is it beneficial?

It

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