2N2219AE4-Transistor-RoHS Overview
The 2N2219AE4 is a RoHS-compliant NPN bipolar junction transistor designed for general-purpose amplification and switching applications. It offers reliable performance with a maximum collector current of 800mA and a voltage rating up to 40V, making it suitable for medium-power circuits. Its robust construction ensures stable operation in a wide range of industrial and commercial environments. Engineers and sourcing specialists will appreciate its standardized TO-39 metal can package, which supports efficient heat dissipation and easy integration into through-hole PCB designs. The product is ideal for applications requiring dependable signal amplification and switching with compliance to environmental regulations. For more detailed component sourcing, visit Produttore di circuiti integrati.
2N2219AE4-Transistor-RoHS Technical Specifications
Parametro | Valore |
---|---|
Tipo di transistor | NPN Bipolar Junction |
Collector-Emitter Voltage (V_CEO) | 40 V |
Collector Current (I_C) | 800 mA |
Power Dissipation (P_D) | 0.8 W |
DC Current Gain (h_FE) | 40 to 300 |
Transition Frequency (f_T) | 250 MHz (typical) |
Tipo di confezione | TO-39 Metal Can |
Intervallo di temperatura operativa | Da -65°C a +200°C |
RoHS Compliance | Sì |
2N2219AE4-Transistor-RoHS Key Features
- High Current Capacity: Supports collector currents up to 800mA, enabling effective handling of medium-power loads in switching and amplification.
- Wide Voltage Range: Rated for up to 40V collector-emitter voltage, allowing operation in various voltage-level circuits without risk of breakdown.
- High Gain Variation: DC current gain ranging from 40 to 300 assures flexibility in circuit design for amplification needs across different operating points.
- Thermally Robust Packaging: The TO-39 metal can package ensures enhanced heat dissipation, increasing reliability under continuous operation in harsh industrial environments.
Applicazioni tipiche
- Signal amplification in audio and low-frequency analog circuits, where stable gain and power handling are critical.
- Switching applications in control circuits, enabling reliable on/off operation for loads such as relays and small motors.
- Driver stages for medium-power transistors or other semiconductor devices requiring consistent current amplification.
- General-purpose discrete transistor use in industrial automation and instrumentation due to its robust performance and temperature tolerance.
2N2219AE4-Transistor-RoHS Advantages vs Typical Alternatives
This transistor stands out with its combination of high current capacity, voltage tolerance, and thermal robustness compared to typical general-purpose transistors. It offers enhanced reliability in industrial applications thanks to its metal can package and wide operating temperature range. Its RoHS compliance also ensures environmentally responsible usage, making it a preferred choice over older leaded or less efficient transistor types. This balance of power handling and gain flexibility provides engineers with a versatile component for demanding amplification and switching tasks.
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2N2219AE4-Transistor-RoHS Brand Info
The 2N2219AE4 transistor is commonly manufactured by established semiconductor suppliers specializing in discrete components for industrial and commercial applications. The device is part of a long-standing transistor family originally popularized by manufacturers such as Texas Instruments and ON Semiconductor, known for their quality and reliability. The “AE4” suffix indicates a specific gain grouping and packaging variant that meets RoHS environmental standards. This transistor is widely stocked and supported globally, ensuring consistent availability and support for design engineers and sourcing professionals.
FAQ
What are the main electrical limits of the 2N2219AE4 transistor?
The transistor supports a maximum collector current of 800mA and a collector-emitter voltage up to 40V. It can dissipate up to 0.8 watts of power under appropriate thermal conditions. These limits ensure safe operation within typical medium-power amplifier or switch circuits.
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Is the 2N2219AE4 suitable for high-frequency applications?
This transistor has a typical transition frequency (