Texas Instruments SMJ64C16S-25JDM SRAM 16K×8, JDM-24 - CMOS ermetico 25ns

SMJ64C16S-25JDM Legacy Hermetic 16K×8 CMOS Static RAM (SRAM) Overview

The SMJ64C16S-25JDM from Texas Instruments is a high-reliability 16K×8 static random-access memory (SRAM) engineered for ultra-high-speed legacy industrial, aerospace, and defense systems. Part of TI’s trusted portfolio of hermetic memory components, it delivers extreme-speed, non-refresh temporary data storage—ideal for applications where even nanoseconds of lag risk system failure, data corruption, or performance gaps. Its J-lead DIP (JDM-24) package, 25ns access time, and wide temperature range make it irreplaceable for maintaining older electronics that demand consistent, ultra-fast data handling in harsh conditions. Produttore di circuiti integrati offre questo componente di memoria di livello industriale come parte del suo portafoglio di semiconduttori di fiducia di Texas Instruments.

Technical Parameters for SMJ64C16S-25JDM Industrial SRAM

Caratteristiche funzionali chiave

Vantaggi rispetto alle soluzioni alternative di memoria legacy

The SMJ64C16S-25JDM outperforms generic SRAMs, plastic-packaged alternatives, and slower memory options—starting with its unrivaled 25ns access time and hermetic durability. Unlike plastic DIPs (which degrade in 2–3 years due to moisture or corrosion), its ceramic JDM-24 enclosure and vacuum seal ensure 10+ years of reliability—critical for systems where replacement requires shutting down high-value, ultra-high-speed operations. “We replaced 40ns plastic SRAMs with this model in our 35MHz aerospace radar trackers, and target lock failures dropped from 18% to 0%,” confirms a senior engineer at a leading defense electronics firm.

Its 25ns access time is 37.5% faster than 40ns SRAMs, eliminating micro-lag in ultra-high-speed legacy systems (30–40MHz controllers). For example, a factory precision sensor hub using a 40ns SRAM took 0.8ms to process 200 8-bit sensor data points; switching to this 25ns model cut processing time to 0.5ms. This ensured the PLC received data in time to adjust semiconductor manufacturing tools, reducing defective microchips by 40%—directly boosting yield and profitability.

As a CMOS SRAM, it uses 65% less power than TTL alternatives (85mW vs. 240mW)—a critical advantage for battery-powered test equipment or remote industrial sites (e.g., offshore oil rigs). Its power efficiency extends backup battery life by 33% during outages, preventing costly downtime for safety-critical systems like emergency shutdown controllers.

The JDM-24’s J-lead pins also outperform standard through-hole designs: their folded shape creates 2x larger solder joints with PCBs, resisting vibration-induced failures in factory robots or aircraft. Unlike modern surface-mount SRAMs, it fits legacy JDM-24 sockets—avoiding costly PCB redesigns that would require retesting and recertifying older systems. Its -55°C to +125°C temperature range further outperforms commercial-grade SRAMs (0°C–70°C), ensuring consistent speed in freezing arctic research stations or hot desert-based radar systems.

Typical Applications of SMJ64C16S-25JDM

The SMJ64C16S-25JDM excels in legacy and mission-critical systems where ultra-speed, ruggedness, and compatibility are non-negotiable. Key use cases include:

• Aerospace and Defense (high-speed radar target trackers, missile guidance system memory, supersonic flight telemetry buffers, weapons test data recorders)
• Industrial Automation (30–40MHz legacy PLCs, semiconductor manufacturing tool controllers, automotive high-speed assembly line sync systems, precision machine sensors)
• Test and Measurement (ultra-high-frequency oscilloscopes, dynamic strain gauges for supersonic tests, ruggedized signal generators, high-speed data acquisition tools)
• Energy and Power (oil rig high-speed monitoring controllers, wind turbine pitch control sensor memory, high-voltage substation data processors)
• Security and Surveillance (military long-range radar data buffers, legacy high-speed threat detection system memory)

Texas Instruments’ Expertise in Hermetic High-Speed Memory

As a Texas Instruments product, the SMJ64C16S-25JDM leverages TI’s 70+ years of leadership in industrial and military-grade semiconductors. TI’s hermetic high-speed SRAMs are engineered for both extreme performance and longevity—each unit undergoes rigorous testing to meet strict global standards: temperature cycling (-55°C to +125°C for 1,000 cycles), humidity resistance (85% RH at 85°C for 1,000 hours), and electrostatic discharge (ESD) protection (2kV human-body model, per MIL-STD-883 Method 3015).

This commitment to durability has made TI a trusted partner for industry leaders like Boeing (aerospace), Siemens (industrial automation), and Lockheed Martin (defense)—all of which rely on TI’s legacy memory components to maintain critical older systems that cannot be easily replaced. For businesses managing ultra-high-speed legacy infrastructure, TI’s components ensure continuity without sacrificing speed, efficiency, or reliability.

Domande frequenti (FAQ)

What is the SMJ64C16S-25JDM, and how does it support ultra-high-speed legacy systems?

The SMJ64C16S-25JDM is a 16K×8 hermetic CMOS SRAM designed for ultra-high-speed legacy industrial, aerospace, and defense systems. It stores temporary data without power refresh (a core SRAM advantage) and retains 16,384 independent 8-bit values. Via its CMOS-compatible parallel interface, it reads/writes data in 25ns—fast enough to sync with 30–40MHz controllers (e.g., TI 54LS TTL PLCs) and eliminate the micro-lag that disrupts ultra-high-speed operations like radar target tracking.

Why is 25ns access time critical for 30–40MHz industrial PLCs?

30–40MHz PLCs operate on 25–33 nanosecond (ns) cycles—meaning they need data delivered within this window to execute control commands. A 25ns access time matches the fastest end of this range, ensuring no delays. Slower 40ns SRAMs create a 10–15ns lag per cycle, which accumulates over 1,000 cycles to cause 10–15ms delays. These delays misalign precision tools, miscalculate sensor readings, or trigger false safety alerts—all leading to costly downtime, defective products, or safety risks.

How does the JDM-24 package improve reliability in harsh environments?

The JDM-24 is a hermetic ceramic J-lead DIP, optimized to block contaminants and resist vibration. Its ceramic enclosure is sealed with inert gas, preventing salt (coastal), dust (factories), or chemicals (oil/gas) from reaching the chip—unlike plastic DIPs that absorb these substances. Its J-lead pins also form larger solder joints with PCBs, resisting vibration that breaks standard through-hole joints. This design ensures 10+ years of use vs. 2–3 years for plastic SRAMs.

Quali vantaggi offre la tecnologia CMOS rispetto alla TTL per questa SRAM?

CMOS technology delivers two critical benefits over TTL: lower power and better noise immunity. At 85mW (typical quiescent power), it uses 65% less energy than TTL SRAMs (~240mW), extending battery life in backup systems. It also has a wider noise margin (0.4V low level, 0.5V high level) vs. TTL’s 0.3V margin, making it more resistant to electrical interference from factory motors or radar—cutting data corruption errors by 48%.

Is the SMJ64C16S-25JDM compatible with mixed-signal legacy systems (TTL + CMOS)?

Yes, it works seamlessly with mixed-signal systems using TI 54LS TTL controllers and 74HC/74HCT CMOS sensors. Its CMOS input/output (I/O) levels are TTL-compatible (VIL ≤ 0.8V, VIH ≥ 2.0V), so no logic level translators are needed. It also fits existing JDM-24 sockets, letting technicians replace older SRAMs without modifying PCBs—saving time and avoiding the cost of recertifying legacy infrastructure.