2N1613A-Transistor Overview
The 2N1613A is a silicon NPN bipolar junction transistor designed for general-purpose amplification and switching applications. It features a moderate current gain and voltage rating suitable for low to medium power circuits. This device provides reliable performance in industrial and commercial electronic systems, making it ideal for signal processing and control circuit designs. The transistor’s robust construction supports stable operation under varying temperature conditions, ensuring dependable functionality in diverse environments. Engineers and sourcing specialists can count on this transistor for cost-effective and consistent semiconductor performance. For more detailed information, visit IC 제조업체.
2N1613A-Transistor Technical Specifications
| 매개변수 | 사양 |
|---|---|
| 유형 | NPN Silicon Bipolar Junction Transistor |
| Collector-Emitter Voltage (Vceo) | 30 V |
| Collector Current (Ic) | 100 mA |
| Power Dissipation (Ptot) | 300 mW |
| DC Current Gain (hFE) | 50 to 300 |
| Transition Frequency (fT) | 100MHz(일반) |
| 접합 온도(Tj) | 150 ??C (maximum) |
| 패키지 유형 | TO-18 금속 캔 |
2N1613A-Transistor Key Features
- Stable current gain: Provides consistent amplification performance across a wide range of operating conditions, which benefits precision analog circuits.
- Moderate voltage rating: Supports up to 30 V collector-emitter voltage, making it suitable for low to medium voltage switching and amplification tasks.
- 높은 전환 빈도: Enables effective operation in high-frequency applications up to 100 MHz, enhancing signal integrity in RF and communication circuits.
- Robust thermal handling: Capable of withstanding junction temperatures up to 150 ??C, ensuring reliable operation in industrial environments with thermal stress.
일반적인 애플리케이션
- Signal amplification in audio and low-power radio frequency circuits requiring moderate gain and bandwidth performance.
- Switching elements in control and interface circuits where reliable transistor switching is critical.
- Driver stages for small relays or LEDs in industrial automation and instrumentation systems.
- General-purpose discrete transistor use in educational kits, prototyping, and low-power analog designs.
2N1613A-Transistor Advantages vs Typical Alternatives
This transistor offers a balanced combination of voltage handling, gain, and frequency response that makes it a reliable choice over typical low-power alternatives. Its metal can TO-18 package provides improved thermal dissipation and mechanical durability compared to plastic encapsulated transistors. The wide gain range and stable operation at elevated temperatures deliver enhanced circuit reliability and predictable performance, critical for industrial applications.
베스트셀러 제품
2N1613A-Transistor Brand Info
The 2N1613A is a widely recognized transistor originally specified and standardized by semiconductor manufacturers such as Motorola and Texas Instruments. It is part of the 2N series of discrete transistors that have been industry staples for decades. Today, multiple semiconductor suppliers produce this transistor variant, maintaining consistent specifications and ensuring broad availability. Its legacy as a dependable general-purpose NPN transistor continues to support electronic design engineers in various sectors.
자주 묻는 질문
What type of transistor is the 2N1613A and what are its primary characteristics?
The 2N1613A is an NPN bipolar junction transistor made from silicon. It typically features a collector-emitter voltage rating of 30 V, a maximum collector current of 100 mA, and a DC current gain ranging from 50 to 300. It is designed for general-purpose amplification and switching applications in low to medium power circuits.
🌟 주요 제품
In what package is the 2N1613A transistor supplied, and why is this important?
This transistor is supplied in a TO-18 metal can package. This packaging enhances heat dissipation and offers
