2N2369AUBC/TR NPN Transistor by ON Semiconductor – TO-92 Package, High Gain Switching

  • This transistor amplifies signals efficiently, enhancing circuit performance in various electronic designs.
  • Featuring a specific gain value, it provides stable amplification crucial for consistent output quality.
  • The compact package design enables easy integration and saves valuable board space in tight layouts.
  • Ideal for switching applications, it helps control current flow effectively in power management circuits.
  • Manufactured to meet quality standards, it ensures dependable operation under typical environmental conditions.
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产品上方询盘

2N2369AUBC/TR Overview

The 2N2369AUBC/TR is a high-speed NPN bipolar junction transistor designed for switching and amplification applications in industrial and consumer electronics. Featuring a robust gain bandwidth product and low saturation voltage, this transistor ensures efficient signal processing and reliable operation under various load conditions. Its compact surface-mount package supports integration in modern circuit designs where space and thermal management are critical. Ideal for high-frequency switching and small-signal amplification, it provides engineers and sourcing specialists with a dependable component that balances performance and cost-effectiveness. For detailed technical support and sourcing options, visit IC 제조업체.

2N2369AUBC/TR Key Features

  • High gain bandwidth: Enables fast switching speeds, enhancing performance in high-frequency circuits.
  • Low collector-emitter saturation voltage: Reduces power loss and heat generation during operation, improving overall efficiency.
  • Surface-mount packaging: Facilitates compact PCB layouts and automated assembly, saving space and manufacturing time.
  • 넓은 작동 전압 범위: Supports versatility across multiple circuit designs and power requirements.

2N2369AUBC/TR Technical Specifications

매개변수가치단위Notes
콜렉터-이미터 전압(VCEO)40VMaximum voltage between collector and emitter
Collector-Base Voltage (VCBO)60VMaximum voltage between collector and base
Emitter-Base Voltage (VEBO)5VMaximum voltage between emitter and base
콜렉터 전류(IC)0.6AContinuous collector current rating
전력 손실(PD)0.625WMaximum power dissipation at 25??C
전환 빈도(fT)100MHzFrequency at which current gain drops to unity
DC 전류 이득(hFE)100?C300UnitlessTypical current gain range at IC = 10 mA
Storage Temperature Range-65 ~ +150??CMaximum allowable storage temperature
작동 온도 범위-55 ~ +150??CRecommended junction temperature range

2N2369AUBC/TR Advantages vs Typical Alternatives

This transistor offers superior switching speed and a high gain bandwidth compared to standard bipolar junction transistors, enabling enhanced performance in high-frequency and fast-switching applications. Its low saturation voltage minimizes power loss, which improves energy efficiency and thermal management. Additionally, the surface-mount package supports modern automated assembly processes, making it more cost-effective and reliable versus traditional through-hole alternatives.

일반적인 애플리케이션

  • High-frequency switching circuits requiring fast response times and efficient power handling, such as in signal drivers and pulse amplifiers.
  • Low-power amplification stages in analog and digital communication equipment.
  • General-purpose switching in industrial control systems where compact size and reliability are critical.
  • Interface circuits between microcontrollers and higher power devices in embedded system designs.

2N2369AUBC/TR Brand Info

The 2N2369AUBC/TR is a product offered by leading semiconductor manufacturers recognized for stringent quality control and robust performance standards. This transistor benefits from advanced manufacturing processes that ensure consistent electrical characteristics and long-term reliability. Designed to meet the demands of industrial and consumer electronics sectors, it reflects the brand??s commitment to providing precise, durable, and efficient semiconductor components that integrate seamlessly into diverse applications.

자주 묻는 질문

What are the key electrical limits I need to be aware of when using this transistor?

The maximum collector-emitter voltage is 40 V, and the maximum collector current is 0.6 A. The transistor also has a maximum power dissipation of 0.625 W at 25??C. Exceeding these limits can damage the device or cause unreliable operation.

Can this transistor be used in high-frequency amplification circuits?

Yes, with a transition frequency of approximately 100 MHz, it is suitable for high-frequency applications, including RF amplification and fast switching circuits. Its gain bandwidth product supports stable operation at these frequencies.

What packaging type does this component use, and what are the benefits?

This device is supplied in a surface-mount package, which allows for compact PCB designs, improved thermal performance, and compatibility with automated soldering processes, making it ideal for modern electronics manufacturing.

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产品中间询盘

How does the low collector-emitter saturation voltage benefit my circuit design?

A low saturation voltage reduces power loss during transistor conduction, which increases the overall efficiency of switching applications and helps maintain lower junction temperatures, thereby enhancing device reliability.

Is the 2N2369AUBC/TR suitable for use in harsh environmental conditions?

Yes, it is rated for operation within a wide temperature range from -55??C to +150??C, making it suitable for use in industrial environments where temperature extremes may occur. Proper thermal management is still recommended for optimal performance.

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