CY7C1011CV33-10ZCT 1M x 8 CMOS Static RAM Memory – 44-Lead PLCC Package

  • This device provides high-speed static RAM functionality, enabling efficient data storage and retrieval in digital systems.
  • Featuring a fast access time, it supports quick data processing crucial for time-sensitive applications.
  • The compact 44-pin TSOP package reduces board space, facilitating integration into dense circuit designs.
  • Ideal for buffering data in communication equipment, it helps maintain smooth data flow and system responsiveness.
  • Manufactured with rigorous quality controls, the CY7C1011CV33-10ZCT ensures dependable operation over extended use.
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CY7C1011CV33-10ZCT Overview

The CY7C1011CV33-10ZCT is a high-performance 1 Megabit (128 K x 8) CMOS SRAM designed for fast and efficient static memory applications. Operating at a 3.3V power supply, this device delivers a maximum access time of 10 ns, making it suitable for systems requiring rapid data access and reliable storage. Its low power consumption and robust CMOS technology ensure optimal energy efficiency and thermal performance. The SRAM??s compatibility with standard memory interfaces simplifies integration into various industrial and embedded applications. For detailed technical guidance and product support, visit IC 제조업체.

CY7C1011CV33-10ZCT Technical Specifications

매개변수사양
메모리 밀도1 Megabit (128 K x 8)
액세스 시간10 ns (nanoseconds)
작동 전압3.3 V ?? 0.3 V
TechnologyCMOS
패키지 유형44-pin PLCC
데이터 보존 전압2.0 V (minimum)
작동 온도 범위0??C to +70??C
Power Consumption (Active)Typical 135 mW at 10 MHz
Power Consumption (Standby)Typical 5 mW
Input/Output TypeTTL Compatible

CY7C1011CV33-10ZCT Key Features

  • Fast 10 ns access time: Enables high-speed data retrieval, improving system throughput in timing-critical applications.
  • CMOS low power design: Reduces overall power consumption to extend device lifetime and lower thermal management requirements.
  • 3.3V single power supply operation: Simplifies power system design and ensures compatibility with modern low-voltage logic levels.
  • Standard 44-pin PLCC packaging: Supports easy integration into existing PCB layouts without redesign.
  • High data retention voltage down to 2.0V: Ensures data integrity during power fluctuations and standby modes.
  • TTL compatible inputs and outputs: Facilitates seamless interfacing with a wide range of digital devices and microcontrollers.
  • Industrial temperature range (0??C to +70??C): Allows operation in typical commercial environments with dependable performance.

CY7C1011CV33-10ZCT Advantages vs Typical Alternatives

This SRAM device offers a competitive edge over standard memory alternatives by combining fast 10 ns access time with low power CMOS technology at a 3.3V supply. Its efficient power profile reduces heat generation and energy costs, while the 44-pin PLCC package ensures compatibility with prevalent industrial designs. The device??s wide operating temperature and stable data retention enhance system reliability, making it a preferred choice where speed, power efficiency, and robustness are critical.

일반적인 애플리케이션

  • High-speed cache memory in embedded systems requiring quick access to temporary data storage with minimal latency.
  • Buffer memory in network routers and switches to handle rapid data packet processing and transfer.
  • Data storage in industrial control equipment where reliable and low power memory is essential for continuous operation.
  • Memory expansion in microprocessor-based systems demanding compact, fast, and energy-efficient SRAM modules.

CY7C1011CV33-10ZCT Brand Info

The CY7C1011CV33-10ZCT is part of the established SRAM product line known for delivering reliable, high-speed static memory solutions. Manufactured with advanced CMOS technology, this product is designed to meet the stringent needs of industrial and commercial electronics markets. Its adherence to industry-standard packaging and electrical specifications reflects a commitment to quality and seamless integration, supporting engineers and sourcing specialists in optimizing system performance and design efficiency.

자주 묻는 질문

What is the maximum operating frequency of this SRAM?

The maximum operating frequency corresponds to its 10 ns access time, allowing a theoretical maximum frequency of up to 100 MHz for read/write cycles, making it suitable for high-speed applications where rapid memory access is critical.

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