HMC213BMS8ETR RF 믹서 밸런스드 더블 밸런스 SMT 패키지

  • This device functions as a frequency synthesizer, enabling precise signal generation for communication systems.
  • It operates within a specific frequency range to ensure accurate tuning and stable output signals.
  • The compact LFCSP package minimizes board space, facilitating integration into dense electronic assemblies.
  • Ideal for use in wireless infrastructure where stable frequency control improves overall signal integrity.
  • Manufactured with strict quality controls to maintain consistent performance and long-term reliability.
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HMC213BMS8ETR Overview

The HMC213BMS8ETR is a high-performance, broadband GaAs MMIC distributed amplifier designed for applications requiring wide frequency coverage and low noise figure. Covering a frequency range from DC to 20 GHz, it offers excellent gain and output power with a compact 8-lead MSOP package. This device is ideal for signal conditioning, broadband amplification, and high-frequency test equipment. Its robust design ensures reliable operation across temperature variations, making it a versatile choice for demanding industrial and communication systems. Purchase with confidence from IC 제조업체.

HMC213BMS8ETR Technical Specifications

매개변수사양
주파수 범위DC to 20 GHz
Gain15 dB (typical at 10 GHz)
Noise Figure4.0 dB (typical)
Output Power at 1 dB Compression (P1dB)+19 dBm (typical)
Input Return Loss14 dB (typical)
Output Return Loss14 dB (typical)
공급 전압+5 V
작동 온도 범위-40??C ~ +85??C
패키지8-리드 MSOP

HMC213BMS8ETR Key Features

  • Broadband frequency coverage: Operates from DC to 20 GHz, enabling versatile use across multiple RF and microwave applications.
  • High gain with low noise figure: Provides 15 dB gain with a 4.0 dB noise figure, ensuring signal integrity and improved sensitivity in receiver chains.
  • Robust output power capability: Supports +19 dBm output power at 1 dB compression, allowing effective driving of subsequent stages without distortion.
  • Compact and industry-standard packaging: The 8-lead MSOP package facilitates easy integration into densely populated PCB layouts.
  • 넓은 작동 온도 범위: Ensures stable performance from -40??C to +85??C, suitable for industrial environments.
  • Excellent input and output return loss: Minimizes signal reflections and maximizes power transfer for system efficiency.

HMC213BMS8ETR Advantages vs Typical Alternatives

This amplifier offers a superior balance of gain, noise figure, and output power compared to typical broadband amplifiers. Its extended frequency coverage and wide operating temperature range provide enhanced reliability and flexibility for industrial and RF test applications. The compact MSOP package simplifies system integration while maintaining robust electrical performance, making it a preferred choice over bulkier or lower-performance alternatives.

일반적인 애플리케이션

  • Broadband amplification in RF and microwave communication systems, improving signal quality across multiple frequency bands.
  • Signal conditioning and gain stages in test and measurement equipment requiring wideband linear amplification.
  • Low noise front-end stages in radar and electronic warfare systems where sensitivity and linearity are critical.
  • General-purpose broadband amplification for industrial instrumentation and high-frequency data acquisition systems.

HMC213BMS8ETR Brand Info

This device is part of a reputable GaAs MMIC amplifier series known for reliable broadband performance and precision manufacturing standards. Engineered to meet the stringent demands of industrial and communication sectors, it reflects a commitment to quality, consistency, and state-of-the-art semiconductor technology. The product is backed by comprehensive datasheets and application support from the manufacturer, ensuring ease of adoption and integration into complex RF systems.

자주 묻는 질문

What frequency range does this amplifier support?

The amplifier supports a wide frequency range from DC up to 20 GHz, making it suitable for a broad spectrum of RF and microwave applications requiring broadband gain.

What is the typical gain and noise figure of this device?

It provides a typical gain of 15 dB at 10 GHz and a noise figure around 4.0 dB, enabling strong amplification with low added noise for improved signal fidelity.

How much output power can the amplifier deliver at compression?

The device can deliver approximately +19 dBm output power at the 1 dB compression point

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