2N1489-Transistor NPN Amplifier Transistor in TO-18 Metal Can Package by ON Semiconductor

  • This transistor amplifies electrical signals, enabling effective control in various electronic circuits.
  • It offers stable performance across typical voltage ranges, ensuring consistent operation in diverse conditions.
  • The compact package design allows for efficient use of board space, supporting smaller device layouts.
  • Ideal for switching and amplification tasks in low to medium power applications, enhancing circuit responsiveness.
  • Manufactured to meet standard quality controls, providing reliable operation over extended use.
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2N1489-Transistor Overview

The 2N1489 is a silicon NPN bipolar junction transistor designed for general-purpose amplification and switching applications. Its robust electrical characteristics include a maximum collector current of 1A and a voltage rating suitable for low to medium power circuits. This transistor offers reliable performance in linear amplification and switching scenarios, making it a versatile component for industrial and electronic design engineers. With well-documented specifications, the 2N1489 ensures dependable operation in various circuit configurations, providing consistent gain and thermal stability. For sourcing and detailed inquiry, visit IC-fabrikant.

2N1489-Transistor Technical Specifications

ParameterWaardeEenheid
Collector-uitgangsspanning (VCEO)30V
Collector-Basisspanning (VCBO)40V
Zender-Basisspanning (VEBO)5V
Collectorstroom (IC)1A
Vermogensverlies (Ptot)0.8W
DC stroomversterking (hFE)40 to 300(Typ. Range)
Overgangsfrequentie (fT)100MHz (Typ.)
Operating Junction Temperature (TJ)+150??C

2N1489-Transistor Key Features

  • High collector current capability: Supports up to 1A collector current, enabling efficient switching and amplification in moderate power circuits.
  • Wide voltage ratings: With a collector-emitter voltage of 30V and collector-base voltage of 40V, it suits a variety of low to medium voltage applications.
  • Variable DC gain range: Offers a broad hFE range from 40 to 300, providing design flexibility for gain tuning in amplifier circuits.
  • Good transition frequency: Approximately 100 MHz, making it suitable for high-frequency signal amplification.
  • Reliable thermal performance: Capable of operating up to 150??C junction temperature, ensuring stability under harsh environments.
  • Compact TO-18 metal can package: Provides excellent mechanical durability and effective heat dissipation.

Typical Applications of 2N1489-Transistor

  • Audio and signal amplification circuits where moderate gain and power handling are required, ensuring clear signal reproduction.
  • Switching devices in industrial control systems, enabling reliable on/off control of loads up to 1A.
  • Driver stages in relay and solenoid circuits, facilitating efficient actuation with controlled current flow.
  • General-purpose low to medium frequency oscillators and amplifiers in consumer and industrial electronic equipment.

2N1489-Transistor Advantages vs Typical Alternatives

This transistor offers a balance of moderate power handling and reliable gain, making it advantageous over alternatives with either lower current capability or narrower gain ranges. Its ability to operate at junction temperatures up to 150??C enhances reliability in demanding environments. The broad DC current gain range supports flexible circuit design, while the 100 MHz transition frequency ensures suitability for a variety of signal amplification tasks. These attributes collectively provide engineers with a robust and versatile component for diverse applications.

2N1489-Transistor Brand Info

The 2N1489 transistor is a standard silicon NPN bipolar junction transistor widely available from multiple semiconductor manufacturers. Historically, it has been produced by well-established brands such as Fairchild Semiconductor and Texas Instruments, among others. Its long-standing presence in the market attests to its reliability and extensive use in industrial and commercial electronics. This

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