1N5822 Overview
The 1N5822 is a high-performance Schottky barrier rectifier diode designed for efficient power conversion in industrial and electronic systems. It supports a maximum average forward current of 3A with a low forward voltage drop, ensuring reduced power dissipation and enhanced energy efficiency. Its fast switching speed and robust construction make it ideal for use in power supplies, voltage clamping, and reverse polarity protection. The device is manufactured to meet stringent quality standards, making it a reliable choice for engineers and sourcing specialists seeking durable and effective rectification components. For sourcing and technical details, visit IC-fabrikant.
1N5822 Technical Specifications
| Parameter | Specificatie |
|---|---|
| Maximum Average Forward Current (IF(AV)) | 3 A |
| Maximum Repetitive Peak Reverse Voltage (VRRM) | 40 V |
| Maximum Forward Voltage Drop (VF) at IF=3A | Approximately 0.525 V |
| Maximum Reverse Current (IR) at VR=25 V | 1 mA (typical) |
| Operating Junction Temperature Range (TJ) | -65??C to +125??C |
| Storage Temperature Range (TSTG) | -65??C to +150??C |
| Surge Forward Current (IFSM) | 80 A (non-repetitive) |
| Type verpakking | DO-201AD (DO-41) |
1N5822 Key Features
- Lage spanningsval: Minimizes power loss and heat generation, improving overall circuit efficiency and reliability.
- High Surge Current Capability: Supports up to 80A non-repetitive surge currents, protecting circuits during transient events.
- Fast Switching Speed: Reduces switching losses in high-frequency applications, enhancing performance in power supplies and converters.
- Breed bedrijfstemperatuurbereik: Ensures stable operation in harsh environments, suitable for industrial and automotive applications.
Typische toepassingen
- Power supply rectification in switching regulators, where efficient current conduction and low forward voltage drop are critical for energy savings and thermal management.
- Reverse polarity protection circuits to prevent damage to sensitive electronics by blocking incorrect voltage application.
- Freewheeling diodes in DC motor drives to protect switching devices from voltage spikes during inductive load switching.
- Voltage clamping and transient voltage suppression in industrial control and automation systems to enhance device protection and longevity.
1N5822 Advantages vs Typical Alternatives
The 1N5822 offers a significant advantage over standard silicon rectifiers by delivering a much lower forward voltage drop, which reduces power dissipation and improves efficiency in power circuits. Its high surge current tolerance and fast switching capabilities provide enhanced reliability and better performance in demanding industrial environments. Compared to typical PN junction diodes, this Schottky diode ensures quicker response times and lower thermal stress, making it a preferred choice for high-frequency and high-current applications.
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1N5822 Brand Info
The 1N5822 is widely produced by multiple semiconductor manufacturers, including reputable brands such as Vishay, ON Semiconductor, and Diodes Incorporated. These manufacturers ensure strict adherence to industry standards for Schottky diodes, offering consistent quality and reliability. The device is typically available in the DO-201AD (DO-41) package, facilitating easy integration into existing designs. Its global availability and proven performance make it a standard component in power management solutions across various industries.
FAQ
What is the maximum forward current rating of the 1N5822 diode?
The diode can safely conduct a continuous average forward current of up to 3 amperes under specified operating conditions. This rating ensures suitability for moderate power applications such as power supplies and motor drives.
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How does the forward voltage drop of this diode affect circuit efficiency?
The low forward voltage drop, approximately 0.525 volts at full load, reduces power losses during conduction. This contributes to improved efficiency and less heat generation, which is critical for thermal management in compact or high-density designs.
