2N3419S-Transistor NPN Amplifier Transistor in TO-18 Metal Can Package ?C Motorola

2N3419S-Transistor Overview

The 2N3419S transistor is a high-frequency NPN silicon transistor designed primarily for RF amplification and switching applications. Its low noise figure and high gain characteristics make it ideal for use in communication equipment and signal processing circuits. With a maximum collector current rating suitable for moderate power handling, this transistor excels in maintaining signal integrity at VHF and UHF frequencies. Its robust construction and consistent performance enable reliable operation in industrial and commercial electronic systems. Engineers and sourcing specialists can trust this device for precision amplification needs, supported by detailed specifications available through IC-fabrikant.

2N3419S-Transistor Technical Specifications

2N3419S-Transistor Key Features

• High transition frequency: Enables efficient operation in VHF and UHF frequency ranges, improving signal amplification in RF circuits.
• Low noise figure: Reduces signal distortion and maintains clarity, critical for sensitive communication and instrumentation systems.
• Compact TO-18 package: Provides excellent thermal conductivity and mechanical stability, ensuring durable and reliable integration into circuit boards.
• Moderate power handling: Supports power dissipation up to 310 mW, suitable for low to medium power amplification with consistent performance.

Typische toepassingen

• RF Amplifiers: Widely used in VHF/UHF stages of communication devices to boost weak signals with minimal noise introduction.
• Oscillator Circuits: Serves as an active device in signal generation circuits requiring stable frequency response.
• Switching Circuits: Suitable for low power signal modulation and switching in analog and digital electronic systems.
• Instrumentation: Used in precision measurement equipment for signal conditioning due to its low noise and stable gain characteristics.

2N3419S-Transistor Advantages vs Typical Alternatives

This transistor offers a balanced combination of high-frequency performance and low noise, surpassing many general-purpose alternatives that lack sensitivity at VHF/UHF bands. Its moderate power handling and stable gain provide engineers with reliable precision amplification without excessive thermal management. The metal TO-18 package enhances heat dissipation and mechanical robustness, improving overall device longevity compared to plastic-encapsulated transistors. These advantages make it a preferred choice for RF and signal processing applications requiring accuracy and dependable operation.

2N3419S-Transistor Brand Info

The 2N3419S is a well-established transistor model originally developed by Motorola and subsequently produced by multiple semiconductor manufacturers under license. It is recognized for its consistent quality in RF amplification roles and is commonly available from leading suppliers specializing in discrete semiconductor components. The device??s legacy and proven performance make it a trusted solution in industrial and commercial electronics, supported by extensive datasheets and application notes from brands specializing in silicon transistor technology.

FAQ

What is the maximum collector current rating for this transistor?

The maximum continuous collector current for this transistor is 15 mA. Operating beyond this limit may cause device failure or degraded reliability. It is important to design circuits within this current rating to ensure stable performance.

Can this transistor be used for RF amplification at frequencies above 100 MHz?

Yes, the device typically features a transition frequency (f_T) of around 100 MHz, making it suitable for RF amplification in VHF and lower UHF frequency bands. However, performance may vary depending on circuit layout and operating conditions.

What package type does this transistor use, and why is it important?

This transistor is housed in a TO-18 metal can package, which provides excellent thermal conductivity and mechanical