2N3440E3-Transistor-RoHS NPN Amplifier Transistor in TO-18 Package by ON Semiconductor

2N3440E3-Transistor-RoHS Overview

The 2N3440E3 is a high-voltage NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. Featuring a collector-to-emitter voltage rating of 100 V and a continuous collector current of up to 0.8 A, it offers robust performance for medium power circuits. This transistor meets RoHS compliance, ensuring environmentally friendly manufacturing without sacrificing electrical reliability. Its TO-18 metal can package provides excellent thermal dissipation and mechanical stability, making it a preferred choice for engineers requiring durable, high-voltage discrete components. Available through IC-fabrikant, this transistor is optimized for industrial and commercial electronic designs.

2N3440E3-Transistor-RoHS Key Features

• High voltage capability: With a maximum collector-emitter voltage of 100 V, it supports demanding power requirements in switching and amplification circuits.
• Moderate current handling: The device can continuously conduct up to 0.8 A collector current, enabling reliable operation in medium power applications.
• Low power dissipation: Maximum power dissipation of 625 mW ensures efficient thermal management while maintaining performance stability.
• RoHS compliant: Manufactured following environmental regulations, aiding compliance in green product designs without compromising transistor integrity.
• Compact TO-18 package: Provides effective heat dissipation and mechanical robustness, supporting long-term reliability in harsh industrial environments.

2N3440E3-Transistor-RoHS Technical Specifications

2N3440E3-Transistor-RoHS Advantages vs Typical Alternatives

This transistor stands out with its high voltage rating combined with moderate current capacity, ideal for circuits that require robust switching and amplification without excessive power loss. Its RoHS compliance ensures environmentally responsible usage, a key advantage over older, non-compliant alternatives. The metal TO-18 package enhances thermal dissipation and mechanical durability, providing better reliability in industrial environments compared to plastic-encapsulated transistors. Additionally, the wide DC current gain range offers design flexibility for various amplification requirements.

Typische toepassingen

• Medium power amplifiers: Suitable for audio and RF signal amplification where high voltage and moderate current are necessary, ensuring stable gain and reliable operation.
• Switching circuits: Ideal for on/off control in industrial automation systems requiring efficient transistor switching under high voltage conditions.
• Voltage regulation: Can be used in linear voltage regulators and driver circuits, benefiting from its power dissipation and gain characteristics.
• Signal processing: Useful in analog signal conditioning circuits, including preamplifiers and buffers, where precise transistor parameters improve performance.

2N3440E3-Transistor-RoHS Brand Info

The 2N3440E3 transistor is a trusted product within the portfolio of reputable semiconductor manufacturers specializing in discrete components for industrial electronics. Manufactured under stringent quality controls, it adheres to RoHS directives ensuring it meets environmental and safety standards. The device??s metal TO-18 package and well-defined electrical characteristics reflect the brand??s commitment to delivering durable, high-performance components tailored for professional applications in power amplification and switching domains.

FAQ

What is the maximum collector-emitter voltage rating for this transistor?

The maximum collector-emitter voltage rating is 100 V, which defines the highest voltage the transistor can safely handle between collector and emitter terminals without breakdown. This makes it suitable for high-voltage switching and amplification tasks.

Is this transistor compliant with environmental regulations?

Yes, the device is RoHS compliant, meaning it is manufactured without restricted hazardous substances such as lead, mercury, and cadmium. This ensures it meets current environmental and safety standards for electronic components.

What package type does the transistor come in and why is it important?

It comes in a TO-18 metal can package, which provides excellent thermal dissipation and mechanical durability. This packaging helps maintain reliable performance in demanding industrial and commercial environments by effectively managing heat and protecting the device.

Can this transistor be used in high-frequency applications?

With a transition frequency of approximately 50 MHz, it is suitable for moderate-frequency applications. While not designed for ultra-high frequency RF circuits, it performs well in audio frequency and low to mid-range RF amplification scenarios.

What is the typical DC current gain range for this transistor?

The typical DC current gain (h_FE) ranges from 40 to 160 depending on operating conditions. This wide gain range offers flexibility, allowing designers to optimize amplification levels based on specific circuit requirements.