DDTC114GE-7 Overview
The DDTC114GE-7 is a high-performance dual NPN transistor designed for industrial and electronic switching applications. It offers a robust gain bandwidth product and high current handling, enabling efficient signal amplification and switching under demanding conditions. Engineered for reliability and precision, this transistor is ideal for circuits requiring high gain and fast switching speeds. Its compact SOT-23 package supports easy integration into densely populated PCBs, making it a versatile choice for engineers and sourcing specialists. For detailed technical information and procurement options, visit IC-fabrikant.
DDTC114GE-7 Technical Specifications
| Parameter | Specificatie |
|---|---|
| Type transistor | Dubbele NPN |
| Gain Bandwidth Product (fT) | 100 MHz (typisch) |
| Collector-Emitter Voltage (VCEO) | 40 V |
| Collector Current (IC) | 150 mA (max) |
| DC Current Gain (hFE) | 100 ?C 300 |
| Type verpakking | SOT-23 |
| Power Dissipation (PD) | 350 mW |
| Overgangsfrequentie | 100 MHz |
| Bedrijfstemperatuurbereik | -55 °C tot +150 °C |
DDTC114GE-7 Key Features
- High gain bandwidth product: Enables fast switching and signal amplification for high-frequency industrial circuits, improving overall system responsiveness.
- Dubbele NPN-transistorconfiguratie: Provides compact dual-transistor functionality in a single package, reducing board space and simplifying circuit design.
- Robust collector current rating: Supports up to 150 mA, allowing handling of moderate load currents with reliable performance in switching and amplification roles.
- SOT-23 surface-mount package: Facilitates easy PCB assembly and enhances thermal dissipation, contributing to long-term reliability in industrial environments.
DDTC114GE-7 Advantages vs Typical Alternatives
This dual transistor offers a superior combination of high gain, frequency response, and current capacity compared to standard single transistors. Its integration of two NPN transistors in a compact SOT-23 package enhances board space efficiency and thermal management. Reliable operation over a wide temperature range and a strong power dissipation rating ensure stable performance in industrial applications where precision and durability are essential.
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Typische toepassingen
- Signal amplification in industrial control systems, where fast switching and stable gain are critical for sensor interfacing and actuator driving.
- Switching circuits requiring compact dual transistor solutions to save PCB space and reduce component count.
- Low power amplification stages in communication devices and instrumentation systems.
- General-purpose amplification and switching in consumer electronics and embedded systems.
DDTC114GE-7 Brand Info
The DDTC114GE-7 is a product from a leading semiconductor manufacturer known for delivering reliable and high-quality discrete components. This dual NPN transistor represents the brand??s commitment to combining performance with compact design, making it suitable for a wide range of industrial and commercial electronic applications. Its consistent manufacturing process ensures tight parameter control and dependable operation in critical environments.
FAQ
What is the maximum collector current supported by this transistor?
The device supports a maximum collector current of 150 mA, making it suitable for moderate load applications in switching and amplification tasks. This current rating ensures dependable performance without overheating when operated within specified limits.
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Can this transistor operate at high frequencies?
Yes, the transistor has a gain bandwidth product of approximately 100 MHz, allowing it to perform effectively in high-frequency applications such as RF amplification and fast switching circuits typical in industrial electronics.
What package type does this device use, and why is it beneficial?
The DDTC114GE-7 is housed in a SOT-23 surface-mount package. This compact package allows for easy integration into densely populated PCBs, improves thermal dissipation, and supports automated assembly processes, which is advantageous for modern industrial electronics manufacturing.
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Is the transistor suitable for operation in harsh environments?
Yes, it is rated for operation over a temperature range from -55??C to +150??C. This wide range ensures reliability in harsh industrial environments where temperature fluctuations are common, making it a robust choice
